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2010ǯ1·î21Æü(ÌÚ)

20:00-22:00 Ãεþ˭͵»á¡Êʪ¼Á¡¦ºàÎÁ¸¦µæµ¡¹½¡Ë¤Ë¤è¤ë¥·¥ç¡¼¥È¥³¡¼¥¹¡Ê¼çºÅ¡§²Ê¸¦Èñ ÆÃÄêÎΰ踦µæ¡Ö¥Ý¥¹¥È¥¹¥±¡¼¥ê¥ó¥°À¤Âå¤Î¥Ê¥Î¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹¤È³¦ÌÌÀ©¸æ¡×¡Ë


2010ǯ1·î22Æü(¶â)

9:00-9:10 ³«²ñ¤Ë¤¢¤¿¤Ã¤Æ
9:10-10:00 ¡ý
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Ãø¼Ô »³¸ý ±É°ì (Ʊ»Ö¼ÒÂç³ØÂç³Ø±¡ Áí¹çÀ¯ºö²Ê³Ø¸¦µæ²Ê)
TitleInnovation Theory for Breakthroughs
Author Eiichi Yamaguchi (Doshisha University)
¥Ú¡¼¥¸pp. 1 - 6
10:00-10:30 ¡û
Âê̾BiCS Flash Memory for Future Ultra High Density Storage Devices
Ãø¼Ô ÀÄÃÏ ±ÑÌÀ (Åì¼Ç ¥Ç¥Ð¥¤¥¹¥×¥í¥»¥¹³«È¯¥»¥ó¥¿¡¼)
TitleBiCS Flash Memory for Future Ultra High Density Storage Devices
Author Hideaki Aochi (Toshiba Device and Process Development Center)
¥Ú¡¼¥¸pp. 7 - 10
10:30-10:50
Âê̾MONOS·¿¥á¥â¥ê¤Î½ñ¤­¹þ¤ß¡¿¾Ãµî¤Î·«¤êÊÖ¤·¤ËÂФ¹¤ëÍýÏÀŪ¸¡Æ¤
Ãø¼Ô »³¸ý ·ÄÂÀ, ÂçÃÝ Ï¯, ¾®ÎÓ ¸­»Ê, ÇòÀÐ ¸­Æó (ÃÞÇÈÂç³ØÂç³Ø±¡¿ôÍýʪ¼Á²Ê³Ø¸¦µæ²Ê)
TitleTheoretical Studies on the Program/Erase Cycle of MONOS-Type Memories
Author Keita Yamaguchi, Akira Otake, Kenji Kobayashi, Kenji Shiraishi (Graduate School of Pure and Applied Sciences, University of Tsukuba)
¥Ú¡¼¥¸pp. 11 - 14
10:50-11:10
Âê̾ɽÌÌ¡¦³¦ÌÌ¥é¥Õ¥Í¥¹Ä㸺¤Ë¤è¤ë¹â¿®ÍêÀ­¶ËÇö¥·¥ê¥³¥ó»À²½Ëì
Ãø¼Ô º´Æ£ ¿µ¶åϺ, À÷ë Ëþ (ÃÞÇÈÂç³Ø ÅŻҡ¦ÊªÍý¹©³ØÀ칶), ÊÉ µÁϺ, ËÌÀî ½ß°ì, ×¢ÅÄ ÎɹÀ (Åìµþ¥¨¥ì¥¯¥È¥í¥óAT¡Ê³ô¡Ë), Ï¡¾Â δ, »³Éô µªµ×É× (ÃÞÇÈÂç³Ø ³ØºÝʪ¼Á²Ê³Ø¸¦µæ¥»¥ó¥¿¡¼)
TitleReliability Control of Ultra Thin Silicon Dioxide Films with Suppression of Surface and Interface Roughness
Author Shinkuro Sato, Mitsuru Sometani (Inst. of Appl. Phys, Univ. of Tsukuba), Yoshiro Kabe, Junichi Kitagawa, Yoshihiro Hirota (Tokyo Electron AT Ltd), Ryu Hasunuma, Kikuo Yamabe (TIMS, Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 15 - 18
11:10-11:30 ¡û
Âê̾ÀèüMOSFET¤ÎSDÀܹçÎΰè¤Î·ë¾½·ç´Ù¤È¥ê¡¼¥¯ÅÅή¤È¤ÎÁê´Ø¡§ÅÅ»ÒÀþ¥Û¥í¥°¥é¥Õ¥£¡¼¤Ë¤è¤ëľÀÜɾ²Á
Ãø¼Ô ¸Þ½½Íò ¿®¹Ô (£Î£Å£Ã ¥Ç¥Ð¥¤¥¹¥×¥é¥Ã¥È¥Õ¥©¡¼¥à¸¦µæ½ê), Ȭ¹â ¸ø°ì, ¾åÅè ÏÂÌé, »³ËÜ Ë­Æó, ±©º¬ ÀµÌ¦ (£Î£Å£Ã¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ £Ì£Ó£É´ðÁó«È¯¸¦µæ½ê)
TitleCorrelation Among Crystal Defects, Depletion Regions and Junction Leakage in Advanced MOSFETs:Direct Examination by Electron Holography
Author Nobuyuki Ikarashi, K.Yako, K.uejima, T.Yamamoto, M.Hane (NEC)
¥Ú¡¼¥¸pp. 19 - 22
11:30-11:50
Âê̾¥ß¥é¡¼ÅŻҸ²Èù¶À¤òÍѤ¤¤¿£Ó£é»À²½Ëì·ç´Ù¤Ë¤è¤ëÅÅ»ÒÊá³Í¤Î´Ñ»¡
Ãø¼Ô ĹëÀî Àµ¼ù, ÅçÁÒ ÃÒ°ì (¡Ê³ô¡ËÆüΩÀ½ºî½ê Ãæ±û¸¦µæ½ê ¥Ê¥Î¥×¥í¥»¥¹¸¦µæÉô)
TitleSiO2 Defect Imaging by Using Mirror Electron Microscope
Author Masaki Hasegawa, Tomokazu Shimakura (Hitachi, Ltd., Central Research Laboratory)
¥Ú¡¼¥¸pp. 23 - 26
11:50-12:10
Âê̾³ÑÅÙʬ²ò¸÷ÅÅ»Òʬ¸÷Ë¡¤Ë¤è¤ëPb/Si(110)ɽÌ̤βÁÅÅ»ÒÂӥХó¥Éʬ»¶Â¬Äê
Ãø¼Ô »³Ãæ ͤ°ìϺ, ÉðÅÄ ¤µ¤¯¤é, ¿¹ÅÄ À¿, ¾®ÃÓ ½á°ìϺ, ÃæÌî ¹¸ÂÀϺ, ÂçÌç ´² (ÆàÎÉÀèüÂç/ʪ¼ÁÁÏÀ®), µÈ´Ý Àµ¼ù, º£Â¼ ·ò (ȾƳÂÎÍý¹©³Ø¸¦µæ¥»¥ó¥¿¡¼)
TitleMeasurement of Valence Band Dispersions by Photoemission Spectroscopy at Pb/Si(110) Surfaces
Author Yuichiro Yamanaka, Sakura Nishino Takeda, Makoto Morita, Junichiro Koike, Kotaro Nakano, Hiroshi Daimon (Nara Institute of Science and Technology / Materials Science), Masaki Yoshimaru, Takeshi Imamura (Semiconductor Technology Academic Research Center)
¥Ú¡¼¥¸pp. 27 - 30
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13:00-15:00 ¥Ý¥¹¥¿¡¼¥»¥Ã¥·¥ç¥ó
15:10-15:40 ¡û
Âê̾High-k/Ge MISFET¤Ç¤ÎSrGeX³¦ÌÌÁؤθú²Ì
Ãø¼Ô ³ùÅÄ Á±¸Ê (MIRAI-Åì¼Ç), ¹âÅç ¾Ï (Åì¼Ç ¸¦µæ³«È¯¥»¥ó¥¿¡¼LSI´ðÈ×µ»½Ñ¥é¥Ü¥é¥È¥ê¡¼), ¾å̶ÅÄ Íº°ì, ¼êÄÍ ÊÙ (MIRAI-Åì¼Ç)
TitleInfluence of Strontium Germanide Interlayer on High-k/Ge MISFET
Author Yoshiki Kamata (MIRAI-Toshiba), Akira Takashima (Corporate R&D center, Toshiba Corporation), Yuuichi Kamimuta, Tsutomu Teduka (MIRAI-Toshiba)
¥Ú¡¼¥¸pp. 31 - 34
15:40-16:00
Âê̾Ge MIS¹½Â¤¤Ë¤ª¤±¤ëÅÁƳÂÓü¶á˵¤Î³¦Ì̽à°ÌÌ©Å٤ؤγ¦ÌÌÁؤαƶÁ
Ãø¼Ô ÅIJ¬ µªÇ·, ¿åÎÓ ÏË, ¿¹ÅÄ ¹Ô§, ±¦ÅÄ ¿¿»Ê, ÂÀÅÄ ÍµÇ· (ȾƳÂÎMIRAI-NIRC), ¹âÌÚ ¿®°ì (ÅìµþÂç³ØÂç³Ø±¡¹©³Ø·Ï¸¦µæ²Ê¡¢È¾Æ³ÂÎMIRAI-NIRC)
TitleEffect of MIS Interfacial Layers on Interface Trap Density near the Conduction Band Edge in Ge MIS Structures
Author Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (The University of Tokyo, MIRAI-NIRC)
¥Ú¡¼¥¸pp. 35 - 38
16:00-16:20
Âê̾III-V MISFET¥×¥í¥»¥¹¤Ë¤ª¤±¤ë¥¢¥Ë¡¼¥ë¾ò·ï¤¬¥Ç¥Ð¥¤¥¹ÆÃÀ­¤ËÍ¿¤¨¤ë±Æ¶Á
Ãø¼Ô Àаæ ͵Ƿ, ËÎÉô ͧÆó, ÈÄë ÂÀϺ, µÜÅÄ Åµ¹¬, °ÂÅÄ Å¯Æó (»º¶Èµ»½ÑÁí¹ç¸¦µæ½ê), »³ÅÄ ±Ê, Ê¡¸¶ ¾º, ¿Á ²íɧ (½»Í§²½³Ø), ²£»³ Àµ»Ë, ÃÝÃæ ½¼, ¹âÌÚ ¿®°ì (ÅìµþÂç³Ø)
TitleEffects of Annealing Conditions in III-V MISFET Fabrication Processes on the Device Characteristics
Author Hiroyuki Ishii, Yuji Urabe, Taro Itatani, Noriyuki Miyata, Tetsuji Yasuda (National Institute of Advanced Industrial Science and Technology (AIST)), Hisashi Yamada, Noboru Fukuhara, Masahiko Hata (Sumitomo Chemical), Masashi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (The University of Tokyo)
¥Ú¡¼¥¸pp. 39 - 42
16:20-16:40
Âê̾¶ËÇöGeÇ®»À²½Ëì¤Î¹âÌ©Å٥ץ饺¥ÞÃâ²½¤Ë¤è¤ê·ÁÀ®¤·¤¿GeONÀä±ïËì¤Îɾ²Á
Ãø¼Ô µàÌÚ ¹îÇî, ½¨Åç °Ë¿¥, ²¬ËÜ ³Ø, ºÙ°æ Âî¼£, »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ÂçºåÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê)
TitleCharacterization of GeON Dielectrics Fabricated by High-Density Plasma Nitridation of Ultrathin Thermal GeO2
Author Katsuhiro Kutsuki, Iori Hideshima, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Graduate School of Engineering, Osaka University)
¥Ú¡¼¥¸pp. 43 - 46
16:40-17:00
Âê̾ʬ»ÒÆ°ÎϳØË¡¤Ë¤è¤ëGeO2/Ge³¦Ì̹½Â¤¤Î´ðÈÄÌÌÊý°Ì°Í¸À­¤Ë´Ø¤¹¤ëÄ´ºº
Ãø¼Ô ²¸ÅÄ ÃÎÌï, »³ËÜ ±ÑÌÀ (Áá°ðÅÄÂç³ØÍý¹©³Ø½Ñ±¡), ÅÏîµ ¹§¿® (Áá°ðÅÄÂç³ØÍý¹©³Ø½Ñ±¡¡¢Áá°ðÅÄÂç³Ø¥Ê¥ÎÍý¹©³Ø¸¦µæµ¡¹½)
TitleSurface Orientation Dependency of GeO2/Ge Interface Property by Means of Molecular Dynamics
Author Tomoya Onda, Hideaki Yamamoto (Faculty of Science & Engineering, Waseda University), Takanobu Watanabe (Faculty of Science & Engineering, Waseda University, Institute for Nanoscience & Nanotechnology, Waseda University)
¥Ú¡¼¥¸pp. 47 - 50
µÙ·Æ (20 min)
17:20-1£·:40
Âê̾Si¥Ê¥Î¥ï¥¤¥ä¥È¥é¥ó¥¸¥¹¥¿¤ÎºîÀ½¥×¥í¥»¥¹¤ÈÅŵ¤ÆÃÀ­¤ÎÃÇÌÌ·Á¾õ°Í¸À­
Ãø¼Ô º´Æ£ ÁÏ»Ö, ¿·°æ ±Ñϯ (Å칩Âç¥Õ¥í¥ó¥Æ¥£¥¢¸¦), ³ÑÅè ˮǷ (Å칩ÂçÁíÍý¹©), ¥Ñ¡¼¥ë¥Ï¥Ã¥È ¥¢¥Ø¥á¥È (Åìµþ¹©¶ÈÂç³Ø¥Õ¥í¥ó¥Æ¥£¥¢¸¦), ÂçÌÓÍø ·ò¼£ (Áá°ðÅÄÂç¥Ê¥ÎÍý¹©³Ø¸¦µæµ¡¹½), ´ä°æ ÍÎ (Å칩Âç¥Õ¥í¥ó¥Æ¥£¥¢¸¦), »³ÅÄ ·¼ºî (Áá°ðÅÄÂç¥Ê¥ÎÍý¹©³Ø¸¦µæµ¡¹½)
TitleFabrication Process and Electrical Characteristics of Si Nanowire FET
Author Soshi Sato, Hideaki Arai (FRC, Tokyo Institute of Technology), Kuniyuki Kakushima (IGSSE, Tokyo Institute of Technology), Parhat Ahmet (FRC, Tokyo Institute of Technology), Kenji Ohmori (NRL, Waseda Univ.), Hiroshi Iwai (FRC, Tokyo Institute of Techonology), Keisaku Yamada (NRL, Waseda Univ.)
¥Ú¡¼¥¸pp. 51 - 54
17:40-18:00
Âê̾¿åÁÇ¥¢¥Ë¡¼¥ë¤È»ÀÁÇ¥¨¥Ã¥Á¥ó¥°¤Ë¤è¤ëSi¥Ê¥Î¥ï¥¤¥ä¤ÎºÙÀþ²½¤ª¤è¤ÓľÀþ²½
Ãø¼Ô ¿¹ÅÄ ¹Ô§, ±¦ÅÄ ¿¿»Ê, ¿åÎÓ ÏË, ÂÀÅÄ ÍµÇ· (»ºÁí¸¦¥Ê¥ÎÅŻҥǥХ¤¥¹¸¦µæ¥»¥ó¥¿¡¼)
TitleFabrication of Minute Si Nanowire with Atomically Smooth Line Edge Roughness Using Hydrogen Annealing and Oxygen Etching
Author Yukinori Morita, Shinji Migita, Wataru Mizubayashi, Hiroyuki Ota (AIST Nanodevice Innovation Research Center)
¥Ú¡¼¥¸pp. 55 - 58
18:00-20:00 ͼ¿©¡¦º©¿Æ²ñ


2010ǯ1·î23Æü(ÅÚ)

8:30-9:20 ¡ý
TitleHigh-k/Metal Gate Technology: Dipoles, Vacancies and Pathway for EOT Scaling
Author T. Ando (IBM), K. Choi (GLOBALFOUNDRIES), H. Jagannathan, C. Choi, E. Cartier, B. P. Linder, M. M. Frank, Vijay Narayanan (IBM)
¥Ú¡¼¥¸pp. 59 - 64
9:20-9:40
Âê̾Poly-Si/TiN/High-k¥²¡¼¥È¥¹¥¿¥Ã¥¯¤Ë¤ª¤±¤ëÅŶËÊü½ÐÃâÁǤˤè¤ë¥Õ¥é¥Ã¥È¥Ð¥ó¥ÉÅÅ°µÊÑÆ°
Ãø¼Ô ¾¾ÌÚ Éðͺ (¡Ê³ô¡ËȾƳÂÎÀèü¥Æ¥¯¥Î¥í¥¸¡¼¥º), ÂçÌÓÍø ·ò¼£ (Áá°ðÅÄÂç³Ø), ½ô²¬ ů, ÎëÌÚ Î´Ç·, º´Æ£ ´ðÇ· (¡Ê³ô¡ËȾƳÂÎÀèü¥Æ¥¯¥Î¥í¥¸¡¼¥º), ÌÚËÜ ¹À»Ê, À¸ÅÄÌÜ ½Ó½¨ (¡ÊÆÈ¡Ëʪ¼Á¡¦ºàÎÁ¸¦µæµ¡¹½), µÜºê À¿°ì (¹­ÅçÂç³Ø), ÇòÀÐ ¸­Æó (ÃÞÇÈÂç³Ø), Ãεþ ˭͵ (¡ÊÆÈ¡Ëʪ¼Á¡¦ºàÎÁ¸¦µæµ¡¹½), »³ÅÄ ·¼ºî (Áá°ðÅÄÂç³Ø), ¾¾°æ ÎÉÉ× (¡ÊÆÈ¡Ëʪ¼Á¡¦ºàÎÁ¸¦µæµ¡¹½), ͳ¾å ÆóϺ, ÃÓÅÄ Ï¿Í, ÂçÏ© ¾ù (¡Ê³ô¡ËȾƳÂÎÀèü¥Æ¥¯¥Î¥í¥¸¡¼¥º)
TitleVfb Shift Due to Nitrogen Released from Gate-electrode in Poly-Si/TiN/High-k Gate Stacks
Author Takeo Matsuki (Semiconductor Leading Edge Technologies, Inc.), Kenji Ohmori (Waseda University), Tetsu Morooka, Takayuki Suzuki, Motoyuki Sato (Semiconductor Leading Edge Technologies, Inc.), Koji Kimoto, Toshihide Nabatame (National Institute for Materials Science), Seiichi Miyazaki (Hiroshima University), Kenji Shiraishi (University of Tsukuba), Toyohiro Chikyou (National Institute for Materials Science), Keisaku Yamada (Waseda University), Yoshio Matsui (National Institute for Materials Science), Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Semiconductor Leading Edge Technologies, Inc.)
¥Ú¡¼¥¸pp. 65 - 68
9:40-10:00
Âê̾High-kËìÃæ¤Ø¤ÎMgO³È»¶¤òÌÜŪ¤Ë¤·¤¿¥¢¥Ë¡¼¥ë¥×¥í¥»¥¹¤¬Vfb¥·¥Õ¥ÈÎ̤˵ڤܤ¹±Æ¶Á
Ãø¼Ô ½ô²¬ ů, ¾¾ÌÚ Éðͺ, º´Æ£ ´ðÇ·, À¸ÅÄÌÜ ½Ó½¨, ͳ¾å ÆóϺ, ÃÓÅÄ Ï¿Í, ÂçÏ© ¾ù ((³ô)ȾƳÂÎÀèü¥Æ¥¯¥Î¥í¥¸¡¼¥º/Âè°ì¸¦µæÉô)
TitleInfluence of Post Cap-layer Deposition Annealing Temperature for MgO Diffusion in High-k/IFL Stacks on Vfb shift
Author Tetsu Morooka, Takeo Matsuki, Motoyuki Sato, Toshihide Nabatame, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Semiconductor Leading Edge Technologies, Inc./Research Dept.1)
¥Ú¡¼¥¸pp. 69 - 72
µÙ·Æ
10:20-10:40
Âê̾úÁÇÉÔ½ãʪ¤Ëµ¯°ø¤·¤¿TiN/HfSiON¥²¡¼¥È¥¹¥¿¥Ã¥¯¤ÎÅŵ¤ÆÃÀ­Îô²½¸½¾Ý
Ãø¼Ô º´Çì ²íÇ·, ͭ¼ Âó¹¸, ±ü ͺÂç (ÂçºåÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê), ËÌÌî ¾°Éð, ¾®¿ÜÅÄ µá (¥­¥ä¥Î¥ó¥¢¥Í¥ë¥Ð(³ô)), ºÙ°æ Âî¼£, »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ÂçºåÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê)
TitleSystematic Investigation of Carbon Impurity Induced Electrical Degradation of TiN/HfSiON Gate Stacks
Author Masayuki Saeki, Hiroaki Arimura, Yudai Oku (Graduate School of Engineering, Osaka University), Naomu Kitano, Motomu Kosuda (Canon ANELVA Corporation), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Graduate School of Engineering, Osaka University)
¥Ú¡¼¥¸pp. 73 - 76
10:40-11:00
Âê̾HfO2·ë¾½Ëì¤Î¥¢¥Ë¡¼¥ëµ»½Ñ¤Î¸¡Æ¤
Ãø¼Ô ±¦ÅÄ ¿¿»Ê, ¿¹ÅÄ ¹Ô§, ¿åÎÓ ÏË, ÅIJ¬ µªÇ·, ÂÀÅÄ ÍµÇ· (»º¶Èµ»½ÑÁí¹ç¸¦µæ½ê)
TitleExamination of Annealing Techniques for HfO2 Crystalline Thin Films
Author Shinji Migita, Yukinori Morita, Wataru Mizubayashi, Noriyuki Taoka, Hiroyuki Ota (National Institute of Advanced Industrial Science and Technology)
¥Ú¡¼¥¸pp. 77 - 80
11:00-12:00 ¡û
Âê̾[¥Õ¥©¡¼¥«¥¹¥»¥Ã¥·¥ç¥ó] High-k/SiO2³¦Ì̤˷ÁÀ®¤µ¤ì¤ë¥À¥¤¥Ý¡¼¥ë¤Îµ¯¸»
Ãø¼Ô ´î¿ ¹ÀÇ·, Ä»³¤ ÌÀ (ÅìµþÂç³Ø Âç³Ø±¡¹©³Ø·Ï¸¦µæ²Ê ¥Þ¥Æ¥ê¥¢¥ë¹©³ØÀ칶)
TitleIntrinsic Origin of Electric Dipoles Formed at High-k/SiO2 Interface
Author Koji Kita, Akira Toriumi (The University of Tokyo)
¥Ú¡¼¥¸pp. 81 - 84
Ãë¿©
13:00-13:30 ¡û
Âê̾À¸ÂÎͻϷ¿°åÍÑ¥Þ¥¤¥¯¥í¡¦¥Ê¥Î¥·¥¹¥Æ¥à¤Î³«È¯ ¡Ý´ãµåÆâ´°Á´Ëä¹þ·¿¿Í¹©ÌÖËì¡Ý
Ãø¼Ô ÅÄÃæ Å° (ÅìËÌÂç³ØÂç³Ø±¡°å¹©³Ø¸¦µæ²Ê), Íû ¹¯°°, Ê¡Åç ÍÀ»Ë, ¾®Ìø ¸÷Àµ (ÅìËÌÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê)
TitleDevelopment of Fully Implantable Retinal Prosthesis to Achieve High Quality of Life
Author Tetsu Tanaka, KANGWOOK LEE, Takafumi Fukushima, Mitsumasa Koyanagi (Tohoku University)
¥Ú¡¼¥¸pp. 85 - 88
13:30-14:00 ¡û
Âê̾¾¯¿ôÎ¥»¶ÅŲ٤ˤè¤ë¥È¥é¥ó¥¸¥¹¥¿ÆÃÀ­¤Ð¤é¤Ä¤­¤Î¥â¥Ç¥ê¥ó¥°
Ãø¼Ô ÃÝÆâ ·é, Æî±À ½Ó¼£ (NEC¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ £Ì£Ó£É´ðÁó«È¯¸¦µæ½ê), ²£Àî ¿µÆó, º£°æ À¶Î´ (NEC¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ Àèü¥Ç¥Ð¥¤¥¹³«È¯Éô), ÎÓ ´î¹¨ (NEC¥¨¥ì¥¯¥È¥í¥Ë¥¯¥¹ £Ì£Ó£É´ðÁó«È¯¸¦µæ½ê)
TitleModeling of Transistor Characteristics Fluctuations Caused by A Few Discrete Charges
Author Kiyoshi Takeuchi, Toshiharu Nagumo (LSI Fundamental Research Lab. NEC Electronics), Shinji Yokogawa, Kiyotaka Imai (Advanced Device Development Division, NEC Electronics), Yoshihiro Hayashi (LSI Fundamental Research Lab. NEC Electronics)
¥Ú¡¼¥¸pp. 89 - 91
14:00-14:20
Âê̾(100), (110)´ðÈľå High-k/Metal¥²¡¼¥È¥¹¥¿¥Ã¥¯¤Î1/f¥Î¥¤¥ºÆÃÀ­
Ãø¼Ô º´Æ£ ´ðÇ·, ͳ¾å ÆóϺ, ÃÓÅÄ Ï¿Í, ÂçÏ© ¾ù (¡Ê³ô¡ËȾƳÂÎÀèü¥Æ¥¯¥Î¥í¥¸¡¼¥º)
Title1/f Noise Characteristics of High-k/Metal Gate Stacks on (110) and (100) Substrates
Author Motoyuki Sato, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Selete)
¥Ú¡¼¥¸pp. 93 - 96
14:20-14:40
Âê̾Si¹â»Ø¿ôÌ̾å¤Ë·ÁÀ®¤·¤¿»À²½Ëì¤Ë¤ª¤±¤ë³¦Ì̽à°ÌÌ©Å٤κƸ¡Æ¤
Ãø¼Ô Èø·Á ¾Í°ì, ÂçÌî ¿¿Ìé, ÅÄÃæ Àµ½Ó (²£É͹ñΩÂç³Ø), ¿¹ µ®ÍÎ, ËÙÀî ¹ä, °ÂÅÄ Å¯Æó (»º¶Èµ»½ÑÁí¹ç¸¦µæ½ê)
TitleReevaluation of Interface Trap Densities at SiO2 Interfaces on High-Index Surfaces of Si
Author Shoichi Ogata, Shinya Ohno, Masatoshi Tanaka (Yokohama National University), Takahiro Mori, Tsuyoshi Horikawa, Tetsuji Yasuda (National Institute of Advanced Industrial Science and Technology)
¥Ú¡¼¥¸pp. 97 - 100
14:40-15:00
Âê̾¥Ê¥Î¥¹¥±¡¼¥ë¤Î¥ª¡¼¥ß¥Ã¥¯¥³¥ó¥¿¥¯¥ÈºîÀ®¤òÌܻؤ·¤¿¶â°¡¾È¾Æ³Âγ¦Ì̤κƹÍ
Ãø¼Ô üâÅÄ ¹¬¹¨ (ÃÞÇÈÂç³ØÂç³Ø±¡¿ôʪ), ¼¸ý ÀµÏÂ, ±óÆ£ ůϺ (ÅìËÌÂç³Ø³ØºÝ¥»), Ìî¼ ¿¸ÂÀϺ, ÇòÀÐ ¸­Æó (ÃÞÇÈÂç³ØÂç³Ø±¡¿ôʪ)
TitleReconsideration about Metal/Semiconductor Interfaces for Nano Scale Ohmic Contact
Author Yukihiro Takada (Grad. School of Pure and Applied Sciences, Univ. of Tsukuba), Masakazu Muraguchi, Tetsuo Endoh (Center for Interdisciplinary Research, Tohoku Univ.), Shintaro Nomura, Kenji Shiraishi (Grad. School of Pure and Applied Sciences, Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 101 - 104
15:00-15:20
Âê̾1.2 nm-SiON¥²¡¼¥ÈÀä±ïËì¤Ë¤ª¤±¤ë¶É½êÎô²½¸½¾Ý¤ÎÅÅή¸¡½Ð·¿¸¶»Ò´ÖÎϸ²Èù¶À¤òÍѤ¤¤¿¥Ê¥Î¥¹¥±¡¼¥ë´Ñ»¡
Ãø¼Ô ²ÃÆ£ ͺ»°, Ê¿°ÂºÂ Ä«À¿, ºä²¼ ËþÃË, ¶áÆ£ Çî´ð, ºâËþ ï¯ÌÀ (̾¸Å²°Âç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê)
TitleNanometer-scale Observation of Local Degradation Phenomena in 1.2 nm-thick SiON Gate Dielectric Films Using Conductive Atomic Force Microscopy
Author Yuzo Kato, Tomonari Henza, Mitsuo Sakashita, Hiroki Kondo, Shigeaki Zaima (Graduate School of Engineering, Nagoya University)
¥Ú¡¼¥¸pp. 105 - 108
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Âê̾¥¾¥ë¥²¥ëË¡¤Ë¤è¤ëSrTa2O6ÇöË쥭¥ã¥Ñ¥·¥¿¡¼¤ÎºîÀ½¤ÈÅŵ¤ÆÃÀ­É¾²Á
Ãø¼Ô Ϥ è½, ±ÛÁ° ÀµÍÎ, À¾ÅÄ µ®»Ê, Æ⻳ ·é, ±º²¬ ¹Ô¼£ (ÆàÎÉÀèü²Ê³Øµ»½ÑÂç³Ø±¡Âç³Ø/ʪ¼ÁÁÏÀ®²Ê³Ø¸¦µæ²Ê)
TitleFabrication and Evalution of SrTa2O6 Thin Films Using Sol-Gel Method
Author Li Lu, Masahiro Echizen, Takashi Nishida, Kiyoshi Uchiyama, Yukiharu Uraoka (Nara Institute of Science and Technology/ Graduate School of Materials Science)
¥Ú¡¼¥¸pp. 109 - 111

TitleX-ray Photoelectron Spectroscopy Study of Dipole Effects at High-k/SiO2 Interface
Author Li Qiang Zhu, Koji Kita, Tomonori Nishimura, Kosuke Nagashio, Sheng Kai Wang, Akira Toriumi (Dept. of Materials Engineering, The Univ. of Tokyo)
¥Ú¡¼¥¸pp. 113 - 116

Âê̾High-k¶â°»À²½Êª¤Î¥Ð¥ó¥É¥®¥ã¥Ã¥×
Ãø¼Ô ßÀÅÄÃÒÇ· (¡Ê³ô¡ËÆüΩÀ½ºî½ê´ðÁø¦µæ½ê¡¢ÅìµþÂç³ØÀ¸»ºµ»½Ñ¸¦µæ½ê), ÂçÌîδ±û (¡ÊÆÈ¡Ëʪ¼Á¡¦ºàÎÁ¸¦µæµ¡¹½¡¢ÅìµþÂç³ØÀ¸»ºµ»½Ñ¸¦µæ½ê)
TitleElectronic Band Gaps of High-k Metal Oxides Insulators
Author Tomoyuki Hamada (Advanced Research Laboratory, Hitachi Ltd. and Institute of Industrial Science, University of Tokyo), Takahisa Ohno (National Institite of Materials Science and Insititute of Industrial Science, University of Tokyo)
¥Ú¡¼¥¸pp. 117 - 120

Âê̾ALD-Pr»À²½Ëì/Ge3N4/Ge¹½Â¤¤Ë¤ª¤±¤ë³¦Ì̹½Â¤¤ÈÅŵ¤ÅªÆÃÀ­
Ãø¼Ô ²ÃÆ£ ¸øɧ, ¶áÆ£ Çî´ð, ºä²¼ ËþÃË, ºâËþ ï¯ÌÀ (̾¸Å²°Âç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê)
TitleInterfacial Structures and Electrical Properties of ALD-Pr-oxide/Ge3N4/Ge Stacked Structures
Author Kimihiko Kato, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Graduate School of Engineering, Nagoya University)
¥Ú¡¼¥¸pp. 121 - 124

Âê̾Pr(EtCp)3¤òÍѤ¤¤¿Pr»À²½Ëì¤Î¸¶»ÒÁØÂÏÀѤȤ½¤Î·ë¾½¹½Â¤µÚ¤ÓÅŵ¤ÅªÆÃÀ­
Ãø¼Ô ¸ÅÅÄ ÏÂÌé, ¾¾°æ ͵¹â, ¶áÆ£ Çî´ð, ºä²¼ ËþÃË, ºâËþ ï¯ÌÀ (̾¸Å²°Âç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê)
TitleAtomic Layer Deposition of Praseodymium Oxide Film Using Pr(EtCp)3 and, Their Crystalline Structures and Electrical Properties.
Author Kazuya Furuta, Hirotaka Matsui, Hiroki Kondo, Mitsuo Sakashita, Shigeaki Zaima (Graduate School of Engineering, Nagoya University)
¥Ú¡¼¥¸pp. 125 - 128

Âê̾HfSiOxËì¤Ø¤ÎHoleÃíÆþ¤Ë¤è¤ëÅŲÙÊá³Í¥µ¥¤¥È¤ÎÀ¸À®
Ãø¼Ô Åļ ÃÎÂç, µÆÃÏ Íµ¼ù (ÃÞÇÈÂç ÅŻҡ¦ÊªÍý¹©³ØÀ칶), ÂçÌÓÍø ·ò¼£ (Áá°ðÅÄÂç ¥Ê¥ÎÍý¹©³Ø¸¦µæµ¡¹½¥Ê¥Î¥Æ¥¯¸¦), º´Æ£ ´ðÇ· (Selete), Ï¡¾Â δ, »³Éô µªµ×É× (ÃÞÇÈÂç ÅŻҡ¦ÊªÍý¹©³ØÀ칶)
TitleTrap Generation during Hole Injection into HfSiOx Films
Author Chihiro Tamura, Yuuki Kikuchi (Inst. of Appl. Phys, Univ. of Tsukuba), Kenji Ohmori (Nanotechnology Lab., Waseda Univ.), Motoyuki Sato (Selete), Ryu Hasunuma, Kikuo Yamabe (Inst. of Appl. Phys, Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 129 - 132

Âê̾Åų¦°õ²ÃHfSiONËì¤ÎÎô²½²óÉü¤Ë¤ª¤±¤ëÇ®½èÍýÊ·°Ïµ¤°Í¸À­
Ãø¼Ô µÆÃÏ Íµ¼ù, Åļ ÃÎÂç, Ìî¼ ¹ë (ÃÞÇÈÂç³Ø ÅŻҡ¦ÊªÍý¹©³ØÀ칶), ÂçÌÓÍø ·ò¼£ (Áá°ðÅÄÂç³Ø ¥Ê¥Î¥Æ¥¯¥Î¥í¥¸¡¼¸¦µæ¥»¥ó¥¿¡¼), º´Æ£ ´ðÇ· (Selete), Ï¡¾Â δ, »³Éô µªµ×É× (ÃÞÇÈÂç³Ø TIMS)
TitleRestoration from Stress Induced Degradation in HfSiON and Its Dependence on Annealing Ambient
Author Yuuki Kikuchi, Chihiro Tamura, Tsuyoshi Nomura (Inst. of Appl. Phys, Univ. of Tsukuba), Kenji Ohmori (Nanotechnology Reserch Center, Waseda Univ.), Motoyuki Sato (Selete), Ryu Hasunuma, Kikuo Yamabe (TIMS, Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 133 - 136

Âê̾¥¹¥È¥ì¥¹°õ²Ã¤Ë¤è¤ëHfOxËì¤Î·ç´Ù½à°Ì¤ÎÊѲ½
Ãø¼Ô ¼¾å ͺ°ì, Ìî¼ ¹ë, Åļ ÃÎÂç, µÆÃÏ Íµ¼ù (ÃÞÇÈÂç³Ø ÅŻҡ¦ÊªÍý¹©³ØÀ칶), Ï¡¾Â δ, »³Éô µªµ×É× (ÃÞÇÈÂç³Ø TIMS)
TitleStress Induced Variation of Defect Levels in HfOx
Author Yuichi Murakami, Tsuyoshi Nomura, Chihiro Tamura, Yuuki Kikuchi (Inst. of Appl. Phys, Univ. of Tsukuba), Ryu Hasunuma, Kikuo Yamabe (TIMS, Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 137 - 140

Âê̾HfSiONËì¤Ø¤Î¹âÅų¦¥¹¥È¥ì¥¹°õ²Ã¤Ë¤è¤ë¥¨¥Ã¥Á¥ó¥°¥ì¡¼¥ÈÊѲ½
Ãø¼Ô Ìî¼ ¹ë, ¼¾å ͺ°ì, µÆÃÏ Íµ¼ù, Åļ ÃÎÂç (ÃÞÇÈÂç³Ø ÅŻҡ¦ÊªÍý¹©³ØÀ칶), º´Æ£ ´ðÇ· (Selete), ÂçÌÓÍø ·ò¼£ (Áá°ðÅÄÂç³Ø ¥Ê¥Î¥Æ¥¯¥Î¥í¥¸¡¼¸¦µæ½ê), Ï¡¾Â δ, »³Éô µªµ×É× (ÃÞÇÈÂç³Ø TIMS)
TitleVariation of Etching Rate of HfSiON Film Due to Electrical Stress Application
Author Tsuyoshi Nomura, Yuichi Murakami, Yuuki Kikuchi, Chihiro Tamura (Inst. of Appl. Phys, Univ. of Tsukuba), Motoyuki Sato (Selete), Kenji Ohmori (Nanotechnology Reserch Center, Waseda Univ.), Ryu Hasunuma, Kikuo Yamabe (TIMS, Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 141 - 144

Âê̾ZrO2¥²¡¼¥ÈÀä±ïËì¤òÍѤ¤¤¿Ge MOS¥Ç¥Ð¥¤¥¹¤Î³¦ÌÌÀß·×
Ãø¼Ô ºÙ°æ Âî¼£, ²¬ËÜ ³Ø, µàÌÚ ¹îÇî, ·Ê°æ ͪ²ð (ÂçºåÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê), James Harries, µÈ±Û ¾Ïδ, »û²¬ Í­Å (ÆüËܸ¶»ÒÎϸ¦µæ³«È¯µ¡¹½), »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ÂçºåÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê)
TitleInterface Engineering of Ge MOS Devices with ZrO2 Gate Dielectrics
Author Takuji Hosoi, Gaku Okamoto, Katsuhiro Kutsuki, Yusuke Kagei (Graduate School of Eng., Osaka University), James Harries, Akitaka Yoshigoe, Yuden Teraoka (Japan Atomic Energy Agency), Takayoshi Shimura, Heiji Watanabe (Graduate School of Eng., Osaka University)
¥Ú¡¼¥¸pp. 145 - 148

Âê̾La»À²½ÊªµÚ¤ÓY»À²½Êª¥­¥ã¥Ã¥×¥×¥í¥»¥¹¤Ë¤è¤ëHfO2Ëì·ë¾½¹½Â¤¤ÎÊѲ½
Ãø¼Ô ÎëÌÚ Î´Ç·, ¾¾ÌÚ Éðͺ, º´Æ£ ´ðÇ·, ½ô²¬ ů, ͳ¾å ÆóϺ, ÃÓÅÄ Ï¿Í, ÂçÏ© ¾ù (ȾƳÂÎÀèü¥Æ¥¯¥Î¥í¥¸¡¼¥º)
TitleTransformation of Crystalline Structure of HfO2 by La- or Y-oxide Capping and Annealing
Author Takayuki Suzuki, Takeo Matsuki, Motoyuki Sato, Tetsu Morooka, Jiro Yugami, Kazuto Ikeda, Yuzuru Ohji (Semiconductor Leading Edge Technologies, Inc)
¥Ú¡¼¥¸pp. 149 - 152

Âê̾SrO/ La2O3/ CeO2/Si(100)¹½Â¤¤Î¿¼¤µÊý¸þÁÈÀ®Ê¬ÉÛ¤ª¤è¤Ó²½³Ø·ë¹ç¾õÂ֤˵ڤܤ¹Ç®½èÍý¤Î±Æ¶Á
Ãø¼Ô ÌîÊ¿ Çî»Ê, º£ ÍÛ°ìϺ (ÅìµþÅÔ»ÔÂ繩), ¹¬ÅÄ ¤ß¤æ¤­ (Å칩Âç¥Õ¥í¥ó¥Æ¥£¥¢¸¦), ³ÑÅè ˮǷ (Å칩Â籡ÁíÍý¹©), ´ä°æ ÍÎ (Å칩Âç¥Õ¥í¥ó¥Æ¥£¥¢¸¦)
TitleInfluence of Post Deposition Annealing on Compositional Depth Profile and Chemical Structures of SrO/La2O3/CeO2/Si(100)
Author Hiroshi Nohira, Youichirou Kon (Tokyo City Univ.), Miyuki Kouda (FRC. Tokyo Inst. of Tech.), Kuniyuki Kakushima (IGSSE. Tokyo Inst. of Tech.), Hiroshi Iwai (FRC. Tokyo Inst. of Tech.)
¥Ú¡¼¥¸pp. 153 - 156

Âê̾¶â°/¾¸µÁǥɡ¼¥×HfO2/Si´ðÈĤˤª¤±¤ë³¦Ì̹½Â¤¤ÈÅŻҾõÂ֤ιÅXÀþ¸÷ÅÅ»Òʬ¸÷Ë¡¤Ë¤è¤ëɾ²Á
Ãø¼Ô ¾®À¸ã, »³¸µÎ´»Ö, Æ£ÅÄ³Ø (Åì¥ì¥ê¥µ¡¼¥Á¥»¥ó¥¿¡¼/ɽÌ̲òÀϸ¦µæÉô), ´î¿¹ÀÇ· (ÅìµþÂç³ØÂç³Ø±¡/¥Þ¥Æ¥ê¥¢¥ë¹©³ØÀ칶)
TitleCharacterization of Interface Structure and Electronic State of Metal / Metal Doped-HfO2 / Si Stacks by Hard X-Ray Photoelectron Spectroscopy
Author Shingo Ogawa, Takashi Yamamoto, Manabu Fujita (Toray Research Center / Surface Analysis Laboratories), Koji Kita (The University of Tokyo / Depertment of Materials Engineering)
¥Ú¡¼¥¸pp. 157 - 160

Âê̾´õ¥Õ¥Ã»ÀÍϱսèÍý¤Ë¤è¤ëHf·Ï¹âͶÅÅΨ¥²¡¼¥ÈÀä±ïËì¤Ë¥É¡¼¥×¤·¤¿´õÅÚÎà»À²½Êª¤Î¥Õ¥Ã²½¤È¤½¤ÎMOS-FET¥×¥í¥»¥¹¤Ø¤Î±Æ¶Á
Ãø¼Ô ¿ùÅÄ µÁÇî, ÀÄ»³ ·É¹¬, ÃÓÅÄ ÏÂ¿Í (¡Ê³ô¡ËȾƳÂÎÀèü¥Æ¥¯¥Î¥í¥¸¡¼¥º)
TitleFluorination of Lanthanide Doped Hafnium-Based High-k Dielectrics and Its Effect on MOS-FET Processing
Author Yoshihiro Sugita, Takayuki Aoyama, Kazuto Ikeda (Semiconductor Leading Edge Technologies, Inc.)
¥Ú¡¼¥¸pp. 161 - 164

Âê̾EOT=0.5 nm¤Ë¸þ¤±¤¿La2O3/CeOxÀÑÁع½Â¤¤Î¹â²¹Ã»»þ´Ö¥×¥í¥»¥¹¤Î¸¡Æ¤
Ãø¼Ô Í軳 ÂçÍ´, ¾®Ìø ͧ¾ï (Å칩Âç¥Õ¥í¥ó¥Æ¥£¥¢¸¦), ³ÑÅè ˮǷ (Å칩ÂçÁíÍý¹©), ¥Ñ¡¼¥ë¥Ï¥Ã¥È ¥¢¥Ø¥á¥È (Å칩Âç¥Õ¥í¥ó¥Æ¥£¥¢¸¦), Åû°æ °ìÀ¸, À¾»³ ¾´, ¿ù°æ ¿®Ç· (Å칩ÂçÁíÍý¹©), ̾¼è ¸¦Æó, ÉþÉô ·òͺ, ´ä°æ ÍÎ (Å칩Âç¥Õ¥í¥ó¥Æ¥£¥¢¸¦)
TitleHigh Temperature Annealing of La2O3/CeOx Dielectrics for Highly Scaled Gate Stack
Author Daisuke Kitayama, Tomotsune Koyanagi (Tokyo Tech. FRC), Kuniyuki Kakushima (IGSSE), Parhat Ahmet (Tokyo Tech. FRC), Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii (IGSSE), Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Tech. FRC)
¥Ú¡¼¥¸pp. 165 - 168

¡Ú·ÁÀ®¡¦É¾²Á¡¦´ðÁÃʪÀ­¡Û

Âê̾Ge/GeO2³¦Ì̤«¤éæΥ¤¹¤ëGeO¤ÎTDS¤Ë¤è¤ë²òÀÏ
Ãø¼Ô ²¦ À¹³® (ÅìÂ籡¹©¥Þ¥Æ¥ê¥¢¥ë), ´î¿ ¹ÀÇ·, ÅÄȪ ½Ó¹Ô, À¾Â¼ Ãεª, Ĺ¼® ¹¸Êå, Ä»³¤ ÌÀ (ÅìÂ籡¹©¥Þ¥Æ¥ê¥¢¥ë/JST-CREST)
TitleAnalysis of GeO Desorption from GeO2/Ge by Using TDS
Author Sheng Kai Wang (Department of Materials Engineering, The University of Tokyo), Koji Kita, Toshiyuki Tabata, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Department of Materials Engineering, The University of Tokyo/JST-CREST)
¥Ú¡¼¥¸pp. 169 - 172

Âê̾¥ß¥¯¥¿¥ß¥¯¥È¹âÃâÁÇÁÈÀ®Hf-Si-N¤Î·ë¾½¹½Â¤¤ª¤è¤ÓÅŵ¤ÅªÆÃÀ­
Ãø¼Ô µÜËÜ ÏÂÌÀ, ¶áÆ£ Çî´ð, ºâËþ ï¯ÌÀ (̾¸Å²°Âç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê)
TitleCrystalline Structures and Electrical Properties of Mictamict High-N-Content Hf-Si-N
Author Kazuaki Miyamoto, Hiroki Kondo, Shigeaki Zaima (Graduate School of Engineering, Nagoya University)
¥Ú¡¼¥¸pp. 173 - 176

Âê̾Si/SiO2³¦Ì̤«¤é»À²½Ãæ¤ËÊü½Ð¤µ¤ì¤¿SiO¤ÎSiO2¤Ø¤ÎÁȤ߹þ¤ß
Ãø¼Ô ¹â¶¶ ·ûɧ, »³ºê δ¹À, ¶âÅÄ ÀéÊæ»Ò (ÉÙ»ÎÄ̸¦µæ½ê)
TitleMolecular Dynamics Study of Oxidation Process with SiO Emission and Incorporation into the Si/SiO2 System
Author Norihiko Takahashi, Takahiro Yamasaki, Chioko Kaneta (FUJITSU LABORATORIES LTD.)
¥Ú¡¼¥¸pp. 177 - 180

Âê̾Si1-xCx¹ç¶âÁØ¡¿Si(001)ɽÌ̤ˤª¤±¤ë»À²½Í¶µ¯ÃºÁdzȻ¶¡§»À²½ËìÀ®Ä¹¤È¥¨¥Ã¥Á¥ó¥°¾ò·ï¤Ç¤ÎÈæ³Ó
Ãø¼Ô ÊæÀÑ ±ÑÉË, ¾®Àî ½¤°ì (ÅìËÌÂç³Ø¿¸µÊª¼Á²Ê³Ø¸¦µæ½ê), µÈ±Û ¾Ïδ (ÆüËܸ¶»ÒÎϸ¦µæ³«È¯µ¡¹½), ÀÐÄÍ âü£ (½©ÅĹ©¶È¹âÅùÀìÌç³Ø¹»Êª¼Á¹©³Ø²Ê), J. R. Harries, »û²¬ Í­Å (ÆüËܸ¶»ÒÎϸ¦µæ³«È¯µ¡¹½), ¹â·¬ ͺÆó (ÅìËÌÂç³Ø¿¸µÊª¼Á²Ê³Ø¸¦µæ½ê)
TitleOxidation-enhanced Diffusion of C Atoms on Si1-xCx Alloy Layer / Si(001) Surface under Oxide Growth and Etching Conditions.
Author Hideaki Hozumi, Shuichi Ogawa (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University), Akitaka Yoshigoe (Quantum Beam Science Directorate, Japan Atomic Energy Agency), Shinji Ishidzuka (Dep. of Applied Chemistry, Akita National College of Technology), J. R. Harries, Yuden Teraoka (Quantum Beam Science Directorate, Japan Atomic Energy Agency), Yuji Takakuwa (Institute of Multidisciplinary Research for Advanced Materials, Tohoku University)
¥Ú¡¼¥¸pp. 181 - 184

Âê̾³ÑÅÙʬ²ò¸÷ÅÅ»Òʬ¸÷¬Äê¤Ë¤è¤ëGaSb(001)¤Î¥Û¡¼¥ë¥µ¥Ö¥Ð¥ó¥Éʬ»¶
Ãø¼Ô ¾®ÃÓ ½á°ìϺ, ÉðÅÄ ¤µ¤¯¤é, ¿¹ÅÄ À¿, »³Ãæ ͤ°ìϺ, ¾¾²¬ ¹°·û, Âç°æ ½¨É×, ÉþÉô ¸­, ÂçÌç ´² (ÆàÎÉÀèüÂç/ʪ¼ÁÁÏÀ®), µÈ´Ý Àµ¼ù, º£Â¼ ·ò (ȾƳÂÎÍý¹©³Ø¸¦µæ¥»¥ó¥¿¡¼)
TitleHole Subband Dispersion in Gallium Antimonide Measured by Angle-Resolved Photoemission Spectroscopy
Author Junichiro Koike, Sakura Nishino Takeda, Makoto Morita, Yuichiro Yamanaka, Hironori Matsuoka, Hideo Ohi, Ken Hattori, Hiroshi Daimon (Nara Institute of Science and Technology / Materials Science), Masaki Yoshimaru, Takeshi Imamura (Semiconductor Technology Academic Research Center)
¥Ú¡¼¥¸pp. 185 - 188

Âê̾¹âͶÅÅΨ»À²½Êª¤ÎͶÅÅÆÃÀ­¤È²½³Ø·ë¹ç¾õÂ֤˴ؤ¹¤ëÍýÏÀŪ¸¦µæ
Ãø¼Ô À¥ÇÈ ÂçÅÚ, Ê¡Åç ·¼¸ç, ÅÚÅÄ ¹¯»Ö, Ω²Ö ÌÀÃÎ (µþÅÔÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê¥Þ¥¤¥¯¥í¥¨¥ó¥¸¥Ë¥¢¥ê¥ó¥°À칶)
TitleTheoretical Study on Dielectric Property and Chemical Bonding States of High-k Oxides
Author Masato Senami, Akinori Fukushima, Yasushi Tsuchida, Akitomo Tachibana (Department of Micro Engineering, Kyoto University)
¥Ú¡¼¥¸pp. 189 - 192

Âê̾Âè°ì¸¶Íý·×»»¤òÍѤ¤¤¿SiO2/Si³¦Ì̤ÎͶÅÅΨ¿äÄê
Ãø¼Ô ¸Þ½½Íò ÃÒ (ÅìµþÅÔ»ÔÂ硦¹©¡¤±§Ã踦), ¾®ÎÓ ÂçÊå (±§Ã踦), ÌîÊ¿ Çî»Ê (ÅìµþÅÔ»ÔÂ硦¹©), ×¢À¥ ÏÂÇ· (±§Ã踦)
TitleDielectric Constant Estimation for SiO2/Si Interface Based on the First-principles Calculation
Author Satoru Igarashi (Tokyo City Univ., ISAS/JAXA), Daisuke Kobayashi (ISAS/JAXA), Hiroshi Nohira (Tokyo City Univ.), Kazuyuki Hirose (ISAS/JAXA)
¥Ú¡¼¥¸pp. 193 - 196

Âê̾ÁêÂÐÏÀŪÅŻҾõÂÖ·×»»¤Ë¤ª¤±¤ë¥¹¥Ô¥ó¥È¥ë¥¯¤Ë¤Ä¤¤¤Æ¤ÎÍýÏÀŪ¸¦µæ
Ãø¼Ô À¥ÇÈ ÂçÅÚ, À¾Àî ½á, ¸¶ ÍÀÌÀ, Ω²Ö ÌÀÃÎ (µþÅÔÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê¥Þ¥¤¥¯¥í¥¨¥ó¥¸¥Ë¥¢¥ê¥ó¥°À칶)
TitleTheoretical Study on Spin Torque by Relativistic ab Initio Electronic Structure Calculation
Author Masato Senami, Jun Nishikawa, Takaaki Hara, Akitomo Tachibana (Department of Micro Engineering, Kyoto University)
¥Ú¡¼¥¸pp. 197 - 200

Âê̾¶É½êŪ¤ÊÅŵ¤ÅÁƳ¤òɽ¸½¤¹¤ëÂè°ì¸¶Íý·×»»
Ãø¼Ô À¥ÇÈ ÂçÅÚ, ÃÓÅÄ Íµ¼£, Ê¡Åç ·¼¸ç, Ω²Ö ÌÀÃÎ (µþÅÔÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê¥Þ¥¤¥¯¥í¥¨¥ó¥¸¥Ë¥¢¥ê¥ó¥°À칶)
TitleFirst-principles Calculations for Local Property of Conductance
Author Masato Senami, Yuji Ikeda, Akinori Fukushima, Akitomo Tachibana (Department of Micro Engineering, Kyoto University)
¥Ú¡¼¥¸pp. 201 - 204

Âê̾HfO2/SiO2¥¹¥¿¥Ã¥¯¹½Â¤Ãæ¤ËÇ®³È»¶¤·¤¿Mg¸¶»Ò¤Î²½³Ø·ë¹ç¾õÂÖ¤ÈMg¤¬·ç´Ù½à°ÌÌ©Å٤˵ڤܤ¹±Æ¶Á
Ãø¼Ô ´ÓÌÜ Âç²ð, ÂçÅÄ ¹¸À¸, ¼¾å ½¨¼ù, Åì À¶°ìϺ, µÜºê À¿°ì (¹­ÅçÂç³ØÂç³Ø±¡ Àèüʪ¼Á²Ê³Ø¸¦µæ²Ê)
TitleCharacterization of Chemical Bonding Features of Mg Atoms Diffused into HfO2/SiO2 Stack and Influence of Mg Incorporation on Defect State Density
Author Daisuke Kanme, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Graduate School of Advanced Sciences of Matter, Hiroshima University)
¥Ú¡¼¥¸pp. 205 - 208

Âê̾TiO2/Pt³¦Ì̤ˤª¤±¤ë²½³Ø·ë¹ç¾õÂÖʬÀϤÈÄñ¹³ÊѲ½ÆÃÀ­É¾²Á
Ãø¼Ô ¸åÆ£ Í¥ÂÀ, ÂçÅÄ ¹¸À¸, ¼¾å ½¨¼ù, Åì À¶°ìϺ, µÜºê À¿°ì (¹­ÅçÂç³ØÂç³Ø±¡ Àèüʪ¼Á²Ê³Ø¸¦µæ²Ê)
TitleChemical Bonding Features at TiO2/Pt Interface and Their Impact on Resistance Switching Properties
Author Yuta Goto, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Graduate School of Advanced Sciences of Matter, Hiroshima University)
¥Ú¡¼¥¸pp. 209 - 212

Âê̾Si(111)Ç®»À²½ËìɽÌÌ¡¦³¦Ì̤Υé¥Õ¥Í¥¹À®Ä¹
Ãø¼Ô ÎÓ Í¥²ð (ÃÞÇÈÂç³Ø ÅŻҡ¦ÊªÍý¹©³ØÀ칶), À¶¿å ůÉ× (»ºÁí¸¦ ¥Ê¥Î¥Æ¥¯¥Î¥í¥¸¡¼¸¦µæÉôÌç), Ï¡¾Â üÏ, »³Éô µªµ×É× (ÃÞÇÈÂç³Ø ³ØºÝʪ¼Á²Ê³Ø¸¦µæ¥»¥ó¥¿¡¼)
TitleRoughness Growth on Si(111) Dioxide Surface Induced by Oxidation at the Interface
Author Yusuke Hayashi (Inst. of Appl. Phys, Univ. of Tsukuba), Tetsuo Shimizu (Nanotechnology RI / AIST), Ryu Hasunuma, Kikuo Yamabe (TIMS, Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 213 - 216

Âê̾XPS¤Ç·èÄꤹ¤ëHigh-kÀä±ïËì²ÁÅÅ»ÒÂÓ¥¨¥Í¥ë¥®¡¼½à°Ì¤ÎÄêÎÌŪºÆ¸¡Æ¤
Ãø¼Ô ¶áÅÄ ÐÒ¸ã, ´î¿ ¹ÀÇ·, À¾Â¼ Ãεª, Ĺ¼® ¹¸Êå, Ä»³¤ ÌÀ (ÅìµþÂç³ØÂç³Ø±¡¹©³Ø·Ï¸¦µæ²Ê¥Þ¥Æ¥ê¥¢¥ë¹©³ØÀ칶)
TitleQuantitative Reinvestigation of Valence Band Maximum Energy Levels of High-k Dielectrics with XPS
Author Yugo Chikata, Koji Kita, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Department of Materials Engineering, Graduate School of Engineering, The University of Tokyo)
¥Ú¡¼¥¸pp. 217 - 220

Âê̾UVʬ¸÷¥¨¥ê¥×¥½¥á¥È¥ê¤òÍѤ¤¤¿Ê£ÁǶþÀÞΨ¬Äê¤Ë´ð¤Å¤¯Ge¾åGeO2ÇöËì¤Î·ç´Ùɾ²Á
Ãø¼Ô µÈÅÄ ¤Þ¤Û¤í (ÅìµþÂç³ØÂç³Ø±¡¥Þ¥Æ¥ê¥¢¥ë¹©³ØÀ칶), ´î¿ ¹ÀÇ·, À¾Â¼ Ãεª, Ĺ¼® ¹¸Êå, Ä»³¤ ÌÀ (ÅìµþÂç³ØÂç³Ø±¡¹©³Ø·Ï¸¦µæ²Ê¥Þ¥Æ¥ê¥¢¥ë¹©³ØÀ칶/JST-CREST)
TitleUV-Spectroscopic Ellipsometry Measurement for Defect Evaluation in GeO2 film
Author Mahoro Yoshida, Kouji Kita, Tomonori Nishimura, Kousuke Nagashio, Akira Toriumi (Department of Materials Engineering, The University of Tokyo)
¥Ú¡¼¥¸pp. 221 - 224

Âê̾¥Ø¥Æ¥í³¦Ì̤˱÷¤±¤ë¥Ð¥ó¥É¥ª¥Õ¥»¥Ã¥È¤Î·èÄê¤Ë¸þ¤±¤¿Internal Photo EmissionË¡¤Î ¾ÜºÙ¸¡Æ¤
Ãø¼Ô ÂëËÜ Ì÷¶Õ, À¾Â¼ Ãεª, Ĺ¼® ¹¸Êå, ´î¿ ¹ÀÇ·, Ä»³¤ ÌÀ (ÅìµþÂç³ØÂç³Ø±¡¹©³Ø·Ï¸¦µæ²Ê¥Þ¥Æ¥ê¥¢¥ë¹©³ØÀ칶)
TitleIntensive Investigation of IPE Method for Band-offset Characterization at Hetero-interface
Author Yasuyoshi Takamoto, Tomonori Nishimura, Kosuke Nagashio, Koji Kita, Akira Toriumi (Department of Materials Engineering, Graduate School of Engineering The University of Tokyo)
¥Ú¡¼¥¸pp. 225 - 228

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Ãø¼Ô À÷ë Ëþ, º´Æ£ ¿µ¶åϺ (ÃÞÇÈÂç³Ø ÅŻҡ¦ÊªÍý¹©³Ø), ²®Ìî ÀµÌÀ, ·ªÎÓ ¶Ñ, ¿Ü¥ö¸¶ µªÇ· (ÉÙ»ÎÅŵ¡¥Ç¥Ð¥¤¥¹¥Æ¥¯¥Î¥í¥¸¡¼), ¾åÅ ÌÀÎÉ (ÃÞÇÈÂç³Ø ÅŻҡ¦ÊªÍý¹©³Ø), Ï¡¾Â δ, »³Éô µªµ×É× (ÃÞÇÈÂç³Ø ÅŻҡ¦ÊªÍý¹©³Ø/³ØºÝʪ¼Á²Ê³Ø¸¦µæ¥»¥ó¥¿¡¼)
TitleCompressive Stress Relaxation and Densification of CVD-SiO2 by Thermal Annealing
Author Mitsuru Sometani, Shinkuro Sato (Inst. of Applied Physics, Univ. of Tsukuba), Masaaki Ogino, Hitoshi Kuribayashi, Yoshiyuki Sugahara (Fuji Electric Device Technology), Akira Uedono (Inst. of Applied Physics, Univ. of Tsukuba), Ryu Hasunuma, Kikuo Yamabe (Inst. of Applied Physics/TIMS. Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 229 - 232

Âê̾¶É½êŪ¤ÊÅŵ¤ÅÁƳΨ¤òÍøÍѤ·¤¿¥·¥ê¥³¥ó¥Ê¥Î¥ï¥¤¥ä¡¼¤ÎÅÅ»ÒÍ¢Á÷ÆÃÀ­¤Ë´Ø¤¹¤ë²òÀÏ
Ãø¼Ô ÃÓÅÄ͵¼£, Ê¡Åç·¼¸ç, À¥ÇÈÂçÅÚ, Ω²ÖÌÀÃÎ (µþÅÔÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê ¥Þ¥¤¥¯¥í¥¨¥ó¥¸¥Ë¥¢¥ê¥ó¥°À칶)
TitleAnalysis for Electron Transport Properties of Silicon Nanowires Using Local Electrical Conductivity
Author Yuji Ikeda, Akinori Fukushima, Masato Senami, Akitomo Tachibana (Department of Micro Engineering, Kyoto University)
¥Ú¡¼¥¸pp. 233 - 236

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Ãø¼Ô ¾®Ìî ÎÑÌé, ã·Æ£ Àµ°ìϯ, ºÙ°æ Âî¼£, ÅÏÉô Ê¿»Ê (ÂçºåÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê)
TitleFirst-principles Study on Defect Formation at Ge/GeO2 Interface
Author Tomoya Ono, Shoichiro Saito, Takuji Hosoi, Heiji Watanabe (Grad. Schl. Eng., Osaka Univ.)
¥Ú¡¼¥¸pp. 237 - 240

Âê̾¶â°¡¿Si³¦Ì̤趻ÒÁÞÆþÁؤΰÂÄêÀ­¤È¥·¥ç¥Ã¥È¥­¡¼¥Ð¥ê¥¢¤Ë´Ø¤¹¤ëÂè°ì¸¶Íý·×»»
Ãø¼Ô ´ÝÅÄ Í¦Î¼, Ã滳 δ»Ë (ÀéÍÕÂç³ØÍý³Ø¸¦µæ²Ê´ðÈ×Íý³ØÀ칶)
TitleFirst-principles Calculations of Stability and Shottky Barrier Heights of Inserted Layers at Metal/Si Interfaces.
Author Yusuke Maruta, Takashi Nakayama (Chiba University)
¥Ú¡¼¥¸pp. 241 - 244

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TitleTheoretical Study on Stability and Electronic Properties of Silicides
Author Shinichi Sotome, Takashi Nakayama (Department of Physics , Chiba University)
¥Ú¡¼¥¸pp. 245 - 248

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Ãø¼Ô ½¨Åç °Ë¿¥, ²¬ËÜ ³Ø, µàÌÚ ¹îÇî, ºÙ°æ Âî¼£, »Ö¼ ¹Í¸ù, ÅÏÉô Ê¿»Ê (ÂçºåÂç³ØÂç³Ø±¡¹©³Ø¸¦µæ²Ê)
TitleImprovement of the Electrical Properties of Ge-MOS Capacitors Degraded by Air Exposure
Author Iori Hideshima, Gaku Okamoto, Katsuhiro Kutsuki, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Graduate School of Engineering, Osaka University)
¥Ú¡¼¥¸pp. 249 - 252

Âê̾ÏÄSi¥Ê¥Î¥ï¥¤¥äFET¤Ë¤ª¤±¤ë¥Á¥ã¥Í¥ëÊý¸þ¤È¥¦¥¨¥ÏÌÌÊý°Ì¤¬ Áê¸ß¥³¥ó¥À¥¯¥¿¥ó¥¹¤ËÍ¿¤¨¤ë±Æ¶Á¤Îɾ²Á
Ãø¼Ô ¹â°æ °ì, À¶²È °½, ÅÚÅÄ °é¿· (ÁáÂçÍý¹©), ÁýÅÄ ½ã°ì, ¾®À¥Â¼ ÂçÊå, ¾®Ìº ¸ü»Ö (ÌÀÂçÍý¹©), ÂçÇñ ´à, ÅÏîµ ¹§¿® (ÁáÂçÍý¹©)
TitleEvaluation of the Impact of Channel Direction and Wafer Orientation on Transconductance for Strained Nanowire Transistors
Author Hajime Takai, Aya Seike, Ikushin Tsuchida (Waseda University), Junichi Masuda, Daisuke Kosemura, Atsushi Ogura (Meiji University), Iwao Ohdomari, Takanobu Watanabe (Waseda University)
¥Ú¡¼¥¸pp. 253 - 256

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TitleTheoretical Studies on the Charge Trapping System of Hydrogen Mixed MONOS-type Memories.
Author Akira Otake, Keita Yamaguchi, Kenji Kobayashi, Kenji Shiraishi (Graduate School of Pure and Applied Sciences, University of Tsukuba)
¥Ú¡¼¥¸pp. 257 - 260