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2015ǯ1·î29Æü(ÌÚ)


2015ǯ1·î30Æü(¶â)

¥»¥Ã¥·¥ç¥ó 1  ´ðÄ´¹Ö±é­¡¡¢¹â°ÜÆ°ÅÙ²½µ»½Ñ¡¦¿·¹½Â¤¥²¡¼¥È¥¹¥¿¥Ã¥¯
Æü»þ: 2015ǯ1·î30Æü(¶â) 9:10 - 11:05

1-1 (»þ´Ö: 9:10 - 10:00)
Âê̾(´ðÄ´¹Ö±é) »°¼¡¸µ½¸ÀѲ½µ»½Ñ¤Î¸½¾õ¤Èº£¸å¤ÎŸ˾
Ãø¼Ô*¾®Ìø ¸÷Àµ (ÅìËÌÂç)
Title(Keynote Speech) Present Situation and Future Prospect of 3D Integration Technology
Author*Mitsumasa Koyanagi (Tohoku Univ.)
¥Ú¡¼¥¸pp. 1 - 4

1-2 (»þ´Ö: 10:00 - 10:45)
Title(Invited Speech) High-k/Metal Gate Innovations in FinFET Era
Author*Takashi Ando (IBM)
¥Ú¡¼¥¸pp. 5 - 6

1-3 (»þ´Ö: 10:45 - 11:05)
Âê̾FLAË¡¤òÍѤ¤¤ÆºîÀ½¤·¤¿¹âÀ­Ç½Â¿·ë¾½Ge tri-gate p-/n-MOSFET¤Î¼Â¾Ú
Ãø¼Ô*±±ÅÄ ¹¨¼£, ³ùÅÄ Á±¸Ê, ¾å̶ÅÄ Íº°ì, ¿¹ µ®ÍÎ, ¾®ÃÓ Àµ¹À, ¼êÄÍ ÊÙ (»ºÁí¸¦)
TitleHigh Performance Tri-Gate Poly-Ge Junction-Less P- and N-MOSFETs Fabricated by Flash Lamp Annealing Process
Author*Koji Usuda, Yoshiki Kamata, Yuuichi Kamimuta, Takahiro Mori, Masahiro Koike, Tstutomu Tezuka (AIST)
¥Ú¡¼¥¸pp. 7 - 10


¥»¥Ã¥·¥ç¥ó 2  ¿®ÍêÀ­¡¦¤æ¤é¤®
Æü»þ: 2015ǯ1·î30Æü(¶â) 11:25 - 12:25

2-1 (»þ´Ö: 11:25 - 11:45)
Âê̾ÈùºÙ·Â¥Ê¥Î¥ï¥¤¥ä¥È¥é¥ó¥¸¥¹¥¿¤Ë¤ª¤±¤ë¿®ÍêÀ­Â¬Äê
Ãø¼Ô*ÂÀÅÄ ·ò²ð, ÅÄÃæ Àé²Ã, ¾ÂÅÄ ÉÒŵ, ¾¾²¼ Âç²ð, ã·Æ£ ¿¿À¡ (Åì¼Ç)
TitleReliability of Tri-Gate Nanowire MOSFET
Author*Kensuke Ota, Chika Tanaka, Toshinori Numata, Daisuke Matsushita, Masumi Saitoh (Toshiba)
¥Ú¡¼¥¸pp. 11 - 14

2-2 (»þ´Ö: 11:45 - 12:05)
Âê̾TDDB¤Ë¤ª¤±¤ë¿·ë¾½HfO2Ëì¤ÎÍ¥°ÌÀ­
Ãø¼Ô*¸Í¼ ͭͤ, Ï¡¾Â δ, »³Éô µªµ×É× (ÃÞÇÈÂç), ±¦ÅÄ ¿¿»Ê (»ºÁí¸¦)
TitleThe Advantage of Polycrystalline HfO2 Films in Terms of TDDB
Author*Yusuke Tomura, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba), Shinji Migita (AIST)
¥Ú¡¼¥¸pp. 15 - 18

2-3 (»þ´Ö: 12:05 - 12:25)
TitleA Study on Random Telegraph Signal Noise Characteristics in Ultra-Thin Gate Dielectrics Based on 1nm EOT (110) MOSFETs
Author*Jiezhi Chen, Yuichiro Mitani (Toshiba)
¥Ú¡¼¥¸pp. 19 - 22


¥»¥Ã¥·¥ç¥ó 3  ¿·Ê¬Ìî (¿·ºàÎÁ¡¤¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¤¤½¤Î¾)
Æü»þ: 2015ǯ1·î30Æü(¶â) 13:25 - 14:35

3-1 (»þ´Ö: 13:25 - 13:55)
Âê̾(¾·ÂÔ¹Ö±é) GaN¥È¥é¥ó¥¸¥¹¥¿¤Ø¤Î´üÂԤȟ˾
Ãø¼Ô*³ë¸¶ ÀµÌÀ, Joel Asubar, ÆÁÅÄ ÇîË® (Ê¡°æÂç)
Title(Invited Speech) Status and Prospects of GaN-based Power Transistors
Author*Masaaki Kuzuhara, Joel Asubar, Hirokuni Tokuda (Univ. of Fukui)
¥Ú¡¼¥¸pp. 23 - 26

3-2 (»þ´Ö: 13:55 - 14:15)
Âê̾¹â²¹¹â°µ¿å¾øµ¤¤òÍѤ¤¤¿Ç®½èÍý¤Ë¤è¤ëGaN·ÏMIS¹½Â¤¤ÎÀä±ïËìµÚ¤Ó³¦ÌÌÆÃÀ­¤Î¸þ¾å
Ãø¼Ô*µÈ»Ì ¹¸¼£, ËÙÅÄ ¾»¹¨, ÀÐ²Ï ÂÙÌÀ, ±º²¬ ¹Ô¼£ (NAIST)
TitleImprovement of Insulating and Interface Properties of GaN-Based MIS Structures by Annealing in High Temperature and High Pressure Water Vapor
Author*Koji Yoshitsugu, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
¥Ú¡¼¥¸pp. 27 - 30

3-3 (»þ´Ö: 14:15 - 14:35)
TitleUnderstanding of Bias-Temperature Instability due to Mobile Ions in SiC Metal-Oxide-Semiconductor Devices
Author*Atthawut Chanthaphan (Osaka Univ.), Yuki Nakano, Takashi Nakamura (ROHM), Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
¥Ú¡¼¥¸pp. 31 - 34


¥»¥Ã¥·¥ç¥ó 4  ¿®ÍêÀ­¡¦¤æ¤é¤®¡¦¥²¡¼¥ÈÀä±ïËì
Æü»þ: 2015ǯ1·î30Æü(¶â) 14:55 - 15:55

4-1 (»þ´Ö: 14:55 - 15:15)
Âê̾4H-SiC¤Ë¤ª¤±¤ë¥¹¥Æ¥Ã¥×¥Ð¥ó¥Á¥ó¥°¾å¤Î»À²½ËìÀä±ïÇ˲õµ¡¹½
Ãø¼Ô*ÌÓÍø ͧµª, ¾¾Â¼ »°¹¾»Ò, ßÀ¼ ¹À¹§, Êö ÍøÇ·, Åç ÌÀÀ¸, »³ÅÄ Î÷°ì, ÅèËÜ ÂÙÍÎ (ÆüΩ)
TitleMechanism of Dielectric Breakdown in Oxide at the Step-Bunching on 4H-SiC
Author*Yuki Mori, Mieko Matsumura, Hirotaka Hamamura, Toshiyuki Mine, Akio Shima, Renichi Yamada, Yasuhiro Shimamoto (Hitachi)
¥Ú¡¼¥¸pp. 35 - 38

4-2 (»þ´Ö: 15:15 - 15:35)
Âê̾SiC-MOSFET¤Ë¤ª¤±¤ëSiO2Àä±ïËìÃæ¤Î¥×¥í¥È¥ó³È»¶¤Ë¤Ä¤¤¤Æ¤ÎÂè°ì¸¶Íý·×»»¤Ë¤è¤ë¸¡Æ¤
Ãø¼Ô*ÇòÀî ͵µ¬ (ÃÞÇÈÂç), ÀöÊ¿ ¾»¹¸ (̾Âç), ¿Àë ¹îÀ¯ (¿ÀÆàÀ²ÊÂç), ÅÏÉô Ê¿»Ê (ºåÂç), ÇòÀÐ ¸­Æó (̾Âç)
TitleFirst Principles Study of Proton Diffusion in SiO2 Dielectric Layer of SiC-MOSFET
Author*Hiroki Shirakawa (Univ. of Tsukuba), Masaaki Araidai (Nagoya Univ.), Katsumasa Kamiya (Center for Basic Education and Integrated Learning), Heiji Watanabe (Osaka Univ.), Kenji Shiraishi (Nagoya Univ.)
¥Ú¡¼¥¸pp. 39 - 42

4-3 (»þ´Ö: 15:35 - 15:55)
TitleKinetic Studying of SiO2-IL Scavenging in HfO2/SiO2/Si Stack
Author*Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo)
¥Ú¡¼¥¸pp. 43 - 46


¥»¥Ã¥·¥ç¥ó T  ¥Á¥å¡¼¥È¥ê¥¢¥ë
Æü»þ: 2015ǯ1·î30Æü(¶â) 16:00 - 17:30

T-1 (»þ´Ö: 16:00 - 17:30)
Âê̾Ìò¤ËΩ¤ÄMEMS(Micro Electro Mechanical Systems)
Ãø¼Ô*¹¾»É Àµ´î (ÅìËÌÂç)
TitleUseful MEMS(Micro Electro Mechanical Systems)
Author*Masayoshi Esashi (Tohoku Univ.)



2015ǯ1·î31Æü(ÅÚ)

¥»¥Ã¥·¥ç¥ó 5  ´ðÄ´¹Ö±é­¢¡¢É¾²Á¡¦´ðÁÃʪÀ­¡¢¿·Ê¬Ìî
Æü»þ: 2015ǯ1·î31Æü(ÅÚ) 8:40 - 10:30

5-1 (»þ´Ö: 8:40 - 9:30)
Âê̾(´ðÄ´¹Ö±é) ¿·¤·¤¤IV²·ÏȾƳÂκàÎÁ¤Î³«È¯¤È³¦ÌÌÀ©¸æ
Ãø¼Ô*ºâËþ ÄÃÌÀ (̾Âç)
Title(Keynote Speech) Development of New Group-IV Semiconductor Materials and Contorol of Its Interface
Author*Shigeaki Zaima (Nagoya Univ.)
¥Ú¡¼¥¸pp. 47 - 50

5-2 (»þ´Ö: 9:30 - 9:50)
Âê̾ÅÅ»ÒÇ»ÅÙ¤ª¤è¤Ó³¦Ì̤ζ­³¦¾ò·ï¤Ë¶¯¤¯°Í¸¤·¤¿Ge¤ÎÅŻҹ½Â¤
Ãø¼Ô*³ôÌø æÆ°ì, À¾Â¼ Ãεª, ÌðÅè ìâÉË, Ä»³¤ ÌÀ (ÅìÂç/JST CREST)
TitleElectronic Structure Modulation Caused by Carrier Density and Interface Boundary Condition of Germanium
Author*Shoichi Kabuyanagi, Tomonori Nishimura, Takeaki Yajima, Akira Toriumi (Univ. of Tokyo/JST CREST)
¥Ú¡¼¥¸pp. 51 - 54

5-3 (»þ´Ö: 9:50 - 10:10)
Âê̾¶â°/Ge³¦Ì̤ˤª¤±¤ëÅÀ·ç´Ù¤ÎÍýÏÀ: MIGS¤ÎÌò³ä¤Ë´Ø¤¹¤ëÂè°ì¸¶ÍýŪ¸¡Æ¤
Ãø¼Ô*º´¡¹ÌÚ ¾©¸ç, Ã滳 δ»Ë (ÀéÍÕÂç)
TitleTheory of Point Defects at Metal/Ge Interfaces: First-Principles-Study on MIGS Effects
Author*Shogo Sasaki, Takashi Nakayama (Chiba Univ.)
¥Ú¡¼¥¸pp. 55 - 58

5-4 (»þ´Ö: 10:10 - 10:30)
Âê̾Sn/Ge¥³¥ó¥¿¥¯¥È¤Ë¤ª¤±¤ë¥Õ¥§¥ë¥ß¥ì¥Ù¥ë¥Ô¥Ë¥ó¥°¤Î·Ú¸º¤ª¤è¤Ó¥·¥ç¥Ã¥È¥­¡¼¾ãÊɹ⤵¤ÎÄ㸺
Ãø¼Ô*ÎëÌÚ ÍÛÍÎ, ûý ±¾À¸ (̾Âç), ¼Æ»³ Ìе×, ¹õß· ¾»»Ö (̾Âç/ÆüËܳؽѿ¶¶½²ñÆÃÊ̸¦µæ°÷), ºä²¼ ËþÃË, ÃÝÆâ ϲÎÆà, ÃæÄÍ Íý, ºâËþ ï¯ÌÀ (̾Âç)
TitleAlleviation of Fermi Level Pinning and Reduction of Schottky Barrier Height at Sn/Ge Contact
Author*Akihiro Suzuki, Yunsheng Deng (Nagoya Univ.), Shigehisa Shibayama, Masashi Kurosawa (Nagoya Univ./Research Fellow of Japan Society for the Promotion Science), Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
¥Ú¡¼¥¸pp. 59 - 62


¥»¥Ã¥·¥ç¥ó 6  ɾ²Á¡¦´ðÁÃʪÀ­
Æü»þ: 2015ǯ1·î31Æü(ÅÚ) 10:50 - 12:00

6-1 (»þ´Ö: 10:50 - 11:20)
Âê̾(¾·ÂÔ¹Ö±é) ¥Ç¥Ð¥¤¥¹Æ°ºî²¼¹Å£ØÀþ¸÷ÅÅ»Òʬ¸÷Ë¡¤Ë¤è¤ëȾƳÂÎÁǻҤγ¦ÌÌɾ²Á
Ãø¼Ô*»³²¼ ÎÉÇ· (NIMS)
Title(Invited Speech) Bias Voltage Dependent Interface Properties Obtained from Hard X-Ray Photoelectron Spectroscopy under Device Operation
Author*Yoshiyuki Yamashita (NIMS)
¥Ú¡¼¥¸pp. 63 - 66

6-2 (»þ´Ö: 11:20 - 11:40)
Âê̾¹ÅXÀþ¸÷ÅÅ»Òʬ¸÷Ë¡¤Ë¤è¤ëCu/HfO2-ReRAMÁÇ»ÒÆ°ºî»þ¤Î³¦Ì̹½Â¤²òÀÏ
Ãø¼Ô*ĹÅÄ µ®¹°, »³²¼ ÎÉÇ·, µÈÀî ±Ñ¼ù, °æ¼ ¾­Î´, ¸â ¾µ½Ó, Ãεþ ˭͵ (NIMS)
TitleBias Application Hard X-Ray Photoelectron Spectroscopy Study of Cu/HfO2 ReRAM Structure
Author*Takahiro Nagata, Yoshiyuki Yamashita, Hideki Yoshikawa, Masataka Imura, Seungjun Oh, Toyohiro Chikyow (NIMS)
¥Ú¡¼¥¸pp. 67 - 70

6-3 (»þ´Ö: 11:40 - 12:00)
Âê̾²£Êý¸þ±ÕÁꥨ¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¤Ë¤è¤Ã¤ÆºîÀ½¤·¤¿Àä±ïÂξåGeSn¥ï¥¤¥ä¤Î¥Õ¥©¥È¥ë¥ß¥Í¥Ã¥»¥ó¥¹Â¬Äê¤Ë¤è¤ë¥Ð¥ó¥É¥®¥ã¥Ã¥×ÊÑÄ´µ»½Ñ
Ãø¼Ô*Å·ËÜ Î´»Ë, ÉÚ±Ê ¹¬Ê¿, ³á¼ ·Ã»Ò, ¾¾¹¾ ¾­Çî, ºÙ°æ Âî¼£, »Ö¼ ¹§¸ù, ÅÏÉô Ê¿»Ê (ºåÂç)
TitlePhotoluminescence Study of Band Gap Modulation of GeSn Wires Fabricated by Lateral Liquid-Phase Epitaxy
Author*Takashi Amamoto, Kouhei Tominaga, Keiko Kajimura, Masahiro Matsue, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
¥Ú¡¼¥¸pp. 71 - 74


¥»¥Ã¥·¥ç¥ó 7  ¥á¥â¥êµ»½Ñ¡¢¥²¡¼¥ÈÀä±ïËì
Æü»þ: 2015ǯ1·î31Æü(ÅÚ) 13:00 - 14:30

7-1 (»þ´Ö: 13:00 - 13:30)
Âê̾(¾·ÂÔ¹Ö±é) Äñ¹³ÊѲ½¥á¥â¥êReRAM: Äñ¹³¥¹¥¤¥Ã¥Á¸ú²Ì¤ÎÀ©¸æ¤È¥á¥â¥êµ»½Ñ³«È¯
Ãø¼Ô*Åç µ×»á, ½©±Ê ¹­¹¬ (»ºÁí¸¦)
Title(Invited Speech) Resistive Random Access Memory (ReRAM): Control of Resistive Switching Phenomenon and Development of Memory Technology
Author*Hisashi SHIMA, Hiroyuki Akinaga (AIST)
¥Ú¡¼¥¸pp. 75 - 78

7-2 (»þ´Ö: 13:30 - 13:50)
Âê̾Âè°ì¸¶Íý·×»»¤Ë¤è¤ëĶ³Ê»ÒGeTe/Sb2Te3¤òÍѤ¤¤¿ÁêÊѲ½¥á¥â¥ê(TRAM)¤Î¥¹¥¤¥Ã¥Á¥ó¥°¥á¥«¥Ë¥º¥à¤Î¸¡Æ¤
Ãø¼Ô*¹â¸Í ¿¿Ç· (̾Âç), ÇòÀî ͵µ¬ (ÃÞÇÈÂç), ÀöÊ¿ ¾»¹¸, ÇòÀÐ ¸­Æó (̾Âç)
TitleFirst Principles Examination of the Switching Mechanism of the Phase Change Memory (TRAM) Using Superlattice GeTe/Sb2Te3
Author*Masayuki Takato (Nagoya Univ.), Hiroki Shirakawa (Tsukuba Univ.), Masaaki Araidai, Kenzi Shiraishi (Nagoya Univ.)
¥Ú¡¼¥¸pp. 79 - 82

7-3 (»þ´Ö: 13:50 - 14:10)
Âê̾¥Ê¥Îγ»ÒËä¹þV¹Â·¿ Junction-less FET¤Ë¤ª¤±¤ë¥á¥â¥ê¸ú²Ìȯ¸½¤Èɾ²Á
Ãø¼Ô*ÈÖ µ®É§, ¾å¾Â ËÓŵ (NAIST), ±¦ÅÄ ¿¿»Ê (»ºÁí¸¦), ²¬ËÜ ¾°Ê¸, ÀÐ²Ï ÂÙÌÀ, »³²¼ °ìϺ, ±º²¬ ¹Ô¼£ (NAIST)
TitleMemory Effect of Metal Nanoparticle Embedded V-Groove Junctionless-FET
Author*Takahiko Ban, Mutsunori Uenuma (NAIST), Shinji Migita (AIST), Naohumi Okamoto, Yasuaki Ishikawa, Ichiro Yamashita, Yukiharu Uraoka (NAIST)
¥Ú¡¼¥¸pp. 83 - 86

7-4 (»þ´Ö: 14:10 - 14:30)
TitleCritical Roles of Doped-Metal Cation in GeO2 for Gate Stack Formation on Ge
Author*Cimang Lu, Choong Hyun Lee, Tomonori Nishimura, Akira Toriumi (Univ. of Tokyo/JST CREST)
¥Ú¡¼¥¸pp. 87 - 90


¥»¥Ã¥·¥ç¥ó 8  ¾·ÂԹֱ顢ɾ²Á¡¦´ðÁÃʪÀ­¡¢¥·¥ß¥å¥ì¡¼¥·¥ç¥ó¡¢¿·Ê¬Ìî
Æü»þ: 2015ǯ1·î31Æü(ÅÚ) 15:00 - 16:30

8-1 (»þ´Ö: 15:00 - 15:30)
Âê̾(¾·ÂÔ¹Ö±é) ·ÖÀз¿¹½Â¤¶¯Í¶ÅÅÂÎÇöËì¤È¤½¤ÎºîÀ½
Ãø¼Ô*½®·¦ ¹À, À¶¿å Áñͺ (Å칩Âç)
Title(Invited Speech) Preparation of Florite-Structure Ferroelectric Thin Films and Their Characterization
Author*Hiroshi Funakubo, Takao Shimizu (Tokyo Inst. of Tech.)
¥Ú¡¼¥¸pp. 91 - 92

8-2 (»þ´Ö: 15:30 - 15:50)
Âê̾ĶʿóSiCɽÌ̾å¤Ø¤Î¥×¥é¥º¥Þ»À²½¤ò±çÍѤ·¤¿Äã¥Ô¥Ã¥ÈÌ©ÅÙ¥°¥é¥Õ¥§¥ó¤Î·ÁÀ®
Ãø¼Ô*Í­ÇÏ ·òÂÀ, ã·Æ£ ľ¼ù, ¿¹ ÂçÃÏ, Àî¹ç ·òÂÀϺ, º´Ìî ÂÙµ×, »³Æâ Ï¿Í, ¿¹ÅÄ ¿ðÊæ (ºåÂç)
TitleFormation of Pit-Free Graphene Assisted by Plasma Oxidation on Flattened SiC Surface
Author*Kenta Arima, Naoki Saito, Daichi Mori, Kentaro Kawai, Yasuhisa Sano, Kazuto Yamauchi, Mizuho Morita (Osaka Univ.)
¥Ú¡¼¥¸pp. 93 - 96

8-3 (»þ´Ö: 15:50 - 16:10)
Âê̾´õÅÚÎà»À²½Êª¤ÎÅŻҾõÂÖ
Ãø¼Ô*ßÀÅÄ ÃÒÇ· (ÆüΩ), ÂçÌî δ±û (NIMS/ÅìÂç)
TitleElectronic Structure of Lanthanide Oxide
Author*Tomoyuki Hamada (Hitachi), Takahisa Ohno (NIMS/Univ. of Tokyo)
¥Ú¡¼¥¸pp. 97 - 100

8-4 (»þ´Ö: 16:10 - 16:30)
Âê̾ÈóÀþ·Á±þÅú¤¹¤ëͶÅÅÂΤò¥È¥é¥ó¥¸¥¹¥¿¤Î¥²¡¼¥ÈÀä±ïËì¤Ë³èÍѤ¹¤ë¤¿¤á¤ÎºàÎÁÀ߷׻ؿË
Ãø¼Ô*ÂÀÅÄ ÍµÇ·, ±¦ÅÄ ¿¿»Ê (»ºÁí¸¦/JST CREST), Ê¡ÅÄ ¹À°ì (»ºÁí¸¦), Ä»³¤ ÌÀ (ÅìÂç/JST CREST)
TitleA Material Design on Metal-Oxide-Semiconductor Electric-Field Transistors Utilizing Gate Insulator with Nonlinearly Electric-Field-Dependent Permittivity
Author*Hiroyuki Ota, Shinji Migita (AIST/CREST, JST), Koich Fukuda (AIST), Akira Toriumi (Univ. of Tokyo/CREST, JST)
¥Ú¡¼¥¸pp. 101 - 104



2015ǯ1·î30Æü(¶â)

¥»¥Ã¥·¥ç¥ó P  ¥Ý¥¹¥¿¡¼¥»¥Ã¥·¥ç¥ó
Æü»þ: 2015ǯ1·î30Æü(¶â) 20:00 - 22:00

P-1 (ɾ²Á¡¦´ðÁÃʪÀ­)
Âê̾SiÃæ¤ÎÅù²ÁÅÅÊ£¹çÉÔ½ãʪ¤ÎÅŻҾõÂ֤˴ؤ¹¤ëÂè°ì¸¶Íý·×»»
Ãø¼Ô*ÈÓÄÍ ¾­ÂÀ, Ã滳 δ»Ë (ÀéÍÕÂç)
TitleFirst-Principles Calculation of Electronic Properties of Isoelectronic Impurity Complex in Si TFET
Author*Shota Iizuka, Takashi Nakayama (Chiba Univ.)
¥Ú¡¼¥¸pp. 105 - 108

P-2 (ɾ²Á¡¦´ðÁÃʪÀ­)
Âê̾SiO2/Si³¦Ì̤η뾽À­Îô²½¤Ë¤è¤ëSi¥Ê¥Î¥ï¥¤¥ä¤ÎNi²½Â®Å٤ξ徺
Ãø¼Ô*Éð°æ ¹¯Ê¿, ¾®¿ù»³ Íδõ, ¶¶ËÜ ½¤°ìϺ, ¥½¥ó ¥»¥¤, ËãÅÄ ½¤Ê¿, ½ù ÂÙ±§, ¼ã¿å ¹· (ÁáÂç), º£°æ μͤ, ÆÁÉð ´²µª, ÉÙÅÄ ´ð͵, ¾®Ìº ¸ü»Ö (ÌÀÂç), ¾¾Àî µ®, ¾»¸¶ ÌÀ¿¢ (»ºÁí¸¦), ÅÏîµ ¹§¿® (ÁáÂç)
TitleEnhancement of Nickelidation Rate of Si Nanowire by Crystal Disorder at SiO2/Si Interface
Author*Kohei Takei, Hiroki Kosugiyama, Shuichiro Hashimoto, Jing Sun, Shuhei Asada, Taiyu Xu, Takashi Wakamizu (Waseda Univ.), Ryosuke Imai, Hiroki Tokutake, Motohiro Tomita, Atsushi Ogura (Meiji Univ.), Takashi Matsukawa, Meishoku Masahara (AIST), Takanobu Watanabe (Waseda Univ.)
¥Ú¡¼¥¸pp. 109 - 112

P-3 (ɾ²Á¡¦´ðÁÃʪÀ­)
TitleEmpirical Potential Profile Model for Unusual Energy Separation of Hole Subbands in Si (111)
Author*Nur Idayu Ayob, Sakura N. Takeda, Takeshi J. Inagaki, Hiroshi Daimon (NAIST)
¥Ú¡¼¥¸pp. 113 - 116

P-4 (ɾ²Á¡¦´ðÁÃʪÀ­)
Âê̾¶â°/Ge³¦Ì̤ǤÎÊÐÀϤˤè¤ë¥·¥ç¥Ã¥È¥­¡¼¥Ð¥ê¥¢ÊÑÄ´¤ÎÂè°ì¸¶Íý·×»»
Ãø¼Ô*²¸ÅÄ Í³µª»Ò, Ã滳 δ»Ë (ÀéÍÕÂç)
TitleFirst-Principles Calculation of Segregation-Induced Schottky-Barrier Modulation at Metal/Ge Interfaces
Author*Yukiko Onda, Takashi Nakayama (Chiba Univ.)
¥Ú¡¼¥¸pp. 117 - 120

P-5 (ɾ²Á¡¦´ðÁÃʪÀ­)
Âê̾³ÑÅÙʬ²ò¸÷ÅÅ»Òʬ¸÷(APRES)¤òÍѤ¤¤¿BiµÛÃåGe(001)ɽÌ̤ΥХó¥Éʬ»¶¹½Â¤
Ãø¼Ô*Æþ¹¾ ¹­°ìϺ, ÉðÅÄ ¤µ¤¯¤é, ºäÅÄ ÃÒ͵, Artoni Kevin Roquero Ang, ÃÝÆâ ¹î¹Ô, ÃæÈø ÉÒ¿Ã, ÅíÌî ¹À¼ù, Á°ÅÄ ¹·Ê¿, ÂçÌç ´² (NAIST)
TitleBand Dispersion of Bi-Absorped Ge(001) Surface by Angularly Resolved Photoelectron Spectroscopy
Author*Kouichirou Irie, Sakura N. Takeda, Tomohiro Sakata, Artoni Kevin Roquero Ang, Katsuyuki Takeuchi, Harushige Nakao, Hiroki Momono, Kouhei Maeda, Hiroshi Daimon (NAIST)
¥Ú¡¼¥¸pp. 121 - 124

P-6 (¥á¥â¥êµ»½Ñ)
Âê̾Al2O3/(Ta/Nb)Ox/Al2O3¥Á¥ã¡¼¥¸¥È¥é¥Ã¥×¥­¥ã¥Ñ¥·¥¿¤Ë¤ª¤±¤ë(Ta/Nb)Ox/Al2O3¥Ö¥í¥Ã¥­¥ó¥°Áؤγ¦Ì̤¬¥Õ¥é¥Ã¥È¥Ð¥ó¥ÉÅÅ°µ¥·¥Õ¥È¤ØµÚ¤Ü¤¹±Æ¶Á
Ãø¼Ô*Âç°æ ¶Çɧ (NIMS), À¸ÅÄÌÜ ½Ó½¨ (NIMS/JST CREST), °ËÆ£ ÏÂÇî, ¹â¶¶ À¿ (ºåÂç), Ãεþ ˭͵ (NIMS)
TitleInfluence of the (Ta/Nb)Ox/Al2O3-Blocking Interface on the Flatband Voltage Shift for Al2O3/(Ta/Nb)Ox/Al2O3 Charge Trap Capacitors
Author*Akihiko Ohi (NIMS), Toshihide Nabatame (NIMS/JST CREST), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.), Toyohiro Chikyo (NIMS)
¥Ú¡¼¥¸pp. 125 - 128

P-7 (¥á¥â¥êµ»½Ñ)
Âê̾Si-rich »À²½Ëì¤Ø¤ÎMn¥Ê¥Î¥É¥Ã¥ÈËä¤á¹þ¤ß¤¬Äñ¹³ÊѲ½ÆÃÀ­¤ØµÚ¤Ü¤¹±Æ¶Á
Ãø¼Ô*¹Ó°æ ¿ò, ÂçÅÄ ¹¸À¸, ËÒ¸¶ ¹îŵ, µÜºê À¿°ì (̾Âç)
TitleImpact of Embedded Mn Nanodots on Resistive Switching Characteristics of Si-rich Oxides as Measured in Ni-Electrodes MIM Diodes
Author*Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
¥Ú¡¼¥¸pp. 129 - 132

P-8 (¿·Ê¬Ìî (¿·ºàÎÁ¡¤¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¤¤½¤Î¾))
Âê̾ÀÖ³°Ê¬¸÷Ë¡¤Ë¤è¤ëSiCÇ®»À²½Ë쳦Ì̤ˤª¤±¤ëSiO2¹½Â¤ÊѲ½¤ÈÉûÀ¸À®Êª·ÁÀ®¤Î´Ñ»¡
Ãø¼ÔÊ¿°æ ͪµ× (ÅìÂç), *´î¿ ¹ÀÇ· (ÅìÂç/JST PRESTO)
TitleFTIR Study on Structural Change of SiO2 and Generation of Byproduct at SiC Thermally Oxidized Interface
AuthorHirohisa Hirai (Univ. of Tokyo), *Koji Kita (Univ. of Tokyo/JST PRESTO)
¥Ú¡¼¥¸pp. 133 - 136

P-9 (¿·Ê¬Ìî (¿·ºàÎÁ¡¤¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¤¤½¤Î¾))
Âê̾C¥É¡¼¥×¤·¤¿InSiO¥Á¥ã¥Í¥ëºàÎÁ¤ÎÅŵ¤ÆÃÀ­µÚ¤ÓʪÀ­¤ËµÚ¤Ü¤¹C¤Î±Æ¶Á
Ãø¼Ô*·ªÅç °ìÆÁ (ÌÀÂç/NIMS), À¸ÅÄÌÜ ½Ó½¨, »°ÆÑ ¿­É§, ÌÚÄÅ ¤¿¤­¤ª, ÄÍ±Û °ì¿Î, ß·ÅÄ Êþ¼Â, Âç°æ ¶Çɧ (NIMS), »³ËÜ °ïÊ¿ (NIMS/¼Ç±º¹©Âç), ÂçÀÐ ÃÎ»Ê (¼Ç±º¹©Âç), Ãεþ ˭͵ (NIMS), ¾®Ìº ¸ü»Ö (ÌÀÂç)
TitleInfluence of Carbon on Physical and Electrical Properties of C-Doped InSiO Channel
Author*Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Nobuhiko Mitoma, Takio Kizu, Kazuhito Tsukagoshi, Tomomi Sawada, Akihiko Ohi (NIMS), Ippei Yamamoto, Tomoji Ohishi (Shibaura Inst. of Tech.), Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.)
¥Ú¡¼¥¸pp. 137 - 140

P-10 (¿·Ê¬Ìî (¿·ºàÎÁ¡¤¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¤¤½¤Î¾))
Âê̾»À²½¤Î¿Ê¹Ô¤Ëȼ¤¦SiO2/4H-SiC(000-1)³¦Ì̹½Â¤¤ÎÊѲ½
Ãø¼Ô*ºû»Ò ÃÎÌï, »³ËÙ ½ÓÂÀ, ÌîÊ¿ Çî»Ê (ÅìµþÅÔ»ÔÂç)
TitleChanges in the SiO2/4H-SiC(000-1) Interface Structure by the Progress of the Oxidation
Author*Tomoya Sasago, Shunta Yamahori, Hiroshi Nohira (Tokyo City Univ.)
¥Ú¡¼¥¸pp. 141 - 144

P-11 (¿·Ê¬Ìî (¿·ºàÎÁ¡¤¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¤¤½¤Î¾))
Âê̾Deal-Grove¥â¥Ç¥ë¤òÍѤ¤¤¿SiCÇ®»À²½µ¡¹½¤Î²òÀÏ
Ãø¼Ô*̾±Û À¯¿Î, Ï¡¾Â δ, »³Éô µªµ×É× (ÃÞÇÈÂç)
TitleInvestigation of SiC Thermal Oxidation Organization by Deal-Grove Model
Author*Masahito Nagoshi, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 145 - 148

P-12 (¿·Ê¬Ìî (¿·ºàÎÁ¡¤¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¤¤½¤Î¾))
Âê̾¼¡À¤ÂåÃâ²½¥¬¥ê¥¦¥à·Ï¥Ç¥Ð¥¤¥¹¤Î¤¿¤á¤Î¥é¥¸¥«¥ëÎ嵯MOCVD¤Ë¤è¤ëGaN-¥Ø¥Æ¥í¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¤Ë´Ø¤¹¤ë¸¦µæ
Ãø¼Ô*⺠Íâ, ´äËÜ °ì´õ, ¾®ÅÄ ½¤, ÀÐÀî ·ò¼£, ¶áÆ£ Çî´ð, ´Øº¬ À¿, ËÙ ¾¡ (̾Âç)
TitleStudy on Hetero-Epitaxial Growth of GaN Using Radical-Enhanced Metal-Organic Chemical Vapor Deposition for Future Gallium Nitride Devices
Author*Yi Lu, Kazuki Iwamoto, Osamu Oda, Kenji Ishikawa, Hiroki Kondo, Makoto Sekine, Masaru Hori (Nagoya Univ.)
¥Ú¡¼¥¸pp. 149 - 152

P-13 (¿·Ê¬Ìî (¿·ºàÎÁ¡¤¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¤¤½¤Î¾))
Âê̾¥é¥¸¥«¥ëÎ嵯MOCVDË¡¤Ë¤è¤ëGaN¥Û¥â¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹¤Ë´Ø¤¹¤ë¸¦µæ
Ãø¼Ô*´äËÜ °ì´õ, ⺠Íâ, ¾®ÅÄ ½¤, ¶áÆ£ Çî´ð, ÀÐÀî ·ò¼£, ´Øº¬ À¿, ËÙ ¾¡ (̾Âç)
TitleStudy on Homo-Epitaxial Growth of GaN Using Radical-Enhanced Metal Organic Chemical Vapor Deposition
Author*Kazuki Iwamoto, Yi Lu, Osamu Oda, Hiroki Kondo, Kenji Ishikawa, Makoto Sekine, Masaru Hori (Nagoya Univ.)
¥Ú¡¼¥¸pp. 153 - 156

P-14 (¿·Ê¬Ìî (¿·ºàÎÁ¡¤¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¤¤½¤Î¾))
Âê̾SiCÇ®»À²½Ëì¤Î¿¼¤µÊý¸þÌ©ÅÙʬÉÛ
Ãø¼Ô*ÎÓ ¿¿Íý»Ò, Ï¡¾Â δ, »³Éô µªµ×É× (ÃÞÇÈÂç)
TitleDepth Profile of Density of Thermal Oxide Film on SiC
Author*Mariko Hayashi, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 157 - 160

P-15 (¿·Ê¬Ìî (¿·ºàÎÁ¡¤¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¤¤½¤Î¾))
Âê̾BƳÆþ¤Ë¤è¤ë¹â°ÜÆ°ÅÙ4H-SiC MOSFET¤ÎºîÀ½¤È³¦Ì̥ȥé¥Ã¥×ɾ²Á
Ãø¼Ô*²¬ËÜ Âç, À÷ë Ëþ, ¸¶ÅÄ ¿®²ð, ¾®¿ù μ¼£, ÊÆß· ´î¹¬ (»ºÁí¸¦), ÌðÌî ͵»Ê (ÃÞÇÈÂç)
TitleFabrication of High Mobility 4H-SiC MOSFETs by B Incorporation and Characterization of Interface Traps
Author*Dai Okamoto, Mitsuru Sometani, Shinsuke Harada, Ryoji Kosugi, Yoshiyuki Yonezawa (AIST), Hiroshi Yano (Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 161 - 164

P-16 (¿·Ê¬Ìî (¿·ºàÎÁ¡¤¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¤¤½¤Î¾))
Âê̾NF3ź²Ã»À²½¤ÇCÌ̾å¤ËºîÀ½¤·¤¿4H-SiC MOS¤ÎÅŵ¤ÆÃÀ­
Ãø¼Ô*²ÖΤ ¹ÌÊ¿, ̾±Û À¯¿Î, Ï¡¾Â δ, »³Éô µªµ×É× (ÃÞÇÈÂç)
TitleElectrical Characteristics of 4H-SiC MOS Fabricated on C-Face in NF3-Added O2 Ambient
Author*Kohei Hanasato, Masahito Nagoshi, Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba)
¥Ú¡¼¥¸pp. 165 - 168

P-17 (¿·Ê¬Ìî (¿·ºàÎÁ¡¤¥Ñ¥ï¡¼¥Ç¥Ð¥¤¥¹¡¤¤½¤Î¾))
Âê̾SiC(0001) SiÌÌǮʬ²ò¥°¥é¥Õ¥§¥ó·ÁÀ®¤ÎÀ©¸æ»Ø¿Ë
Ãø¼Ô*±ÆÅç ÇîÇ· (Å纬Âç), ÆüÈæÌî ¹À¼ù, »³¸ý ¹À»Ê (NTT), ±ÊÀ¥ ²íÉ× (ÆÁÅçÂç)
TitleGuiding Principle for Controlling Epitaxial Graphene Grown on SiC(0001) Si-Face
Author*Hiroyuki Kageshima (Shimane Univ.), Hiroki Hibino, Hiroshi Yamaguchi (NTT), Masao Nagase (Univ. of Tokushima)
¥Ú¡¼¥¸pp. 169 - 172

P-18 (¥²¡¼¥ÈÀä±ïËì)
Âê̾High-k/SiO2³¦Ì̤ΥÀ¥¤¥Ý¡¼¥ëÁؤ¬¥Á¥ã¥Í¥ë¿âľÊý¸þÅų¦¤ËÍ¿¤¨¤ë±Æ¶Á
Ãø¼Ô*»Ö¼ ¹·Î¼, ¶¶¸ý À¿¹­, ¸ùÅá ÎËÂÀ (ÁáÂç), ¾®Ìº ¸ü»Ö (ÌÀÂç/JST CREST), º´Æ£ ¿¿°ì (ʼ¸Ë¸©Î©Âç), ÅÏîµ ¹§¿® (ÁáÂç/JST CREST)
TitleEffect of the Dipole Layer at High-k/SiO2 Interface on the Vertical Field in MOS Channel
Author*Kosuke Shimura, Masahiro hashiguchi, Ryota Kunugi (Waseda Univ.), Atsushi Ogura (Meiji Univ./JST CREST), Shinichi Satoh (Univ. of Hyogo/JST CREST), Takanobu Watanabe (Waseda Univ.)
¥Ú¡¼¥¸pp. 173 - 176

P-19 (¥²¡¼¥ÈÀä±ïËì)
Âê̾PLDË¡¤òÍѤ¤¤¿·ë¾½À­La2O3 ¥²¡¼¥ÈÀä±ïËì/Ge¹½Â¤¤ÎºîÀ½
Ãø¼Ô*¶âÅç ³Ù, ³á¸¶ ¹¯Íµ, Á¬¹â ¿¿¿Í, »³ÅÄ ¿¸Ìé, ÉͲ° ¹¨Ê¿ (ºåÂç)
TitleDirect Growth of Crystalline La2O3 Gate-Insulator Films on Ge by PLD
Author*Takeshi Kanashima, Yasuhiro Kajihara, Masato Zenitaka, Shinya Yamda, Kohei Hamaya (Osaka Univ.)
¥Ú¡¼¥¸pp. 177 - 180

P-20 (¥²¡¼¥ÈÀä±ïËì)
Âê̾TMA/H2O-ALDË¡¤Ë¤è¤ëRutile-TiO2Ëì¤Ø»ÀÁǷ绤ηÁÀ®¤Ë¤è¤ëÅŵ¤ÆÃÀ­
Ãø¼Ô*»³ËÜ °ïÊ¿ (¼Ç±º¹©Âç/NIMS), À¸ÅÄÌÜ ½Ó½¨, ß·ÅÄ Êþ¼Â (NIMS/JST CREST), Âç°æ ¶Çɧ (NIMS), ·ªÅç °ìÆÁ (ÌÀÂç), Thang Duy Dao (NIMS/JST CREST/NAIST), ĹÈø Ãé¾¼, Ãεþ ˭͵ (NIMS), ¾®Ìº ¸ü»Ö (ÌÀÂç), ÂçÀÐ ÃÎ»Ê (¼Ç±º¹©Âç)
TitleElectrical Properties of Oxgen Vacancy in Rutile-TiO2 Films Introduced by TMA/H2O-ALD Process
Author*Ippei Yamamoto (Shibaura Inst. of Tech./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST CREST), Akihiko Ohi (NIMS), Kazunori Kurishima (Meiji Univ.), Thang Duy Dao (NIMS/JST CREST/NAIST), Tadaaki Nagao, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.), Tomoji Ohishi (Shibaura Inst. of Tech.)
¥Ú¡¼¥¸pp. 181 - 184

P-21 (¥²¡¼¥ÈÀä±ïËì)
Âê̾GeO2ÇöËì¤ÎÀµÊý¾½·ÁÀ®¤Ë¤è¤ë²½³ØŪ°ÂÄêÀ­¤Î¸þ¾å
Ãø¼Ô*¼Æ»³ ÌÐµ× (̾Âç/ÆüËܳؽѿ¶¶½²ñÆÃÊ̸¦µæ°÷), µÈÅÄ Å´Ê¼, ²ÃÆ£ ¸øɧ, ºä²¼ ËþÃË, ÃÝÆâ ϲÎÆà, ÅIJ¬ µªÇ·, ÃæÄÍ Íý, ºâËþ ï¯ÌÀ (̾Âç)
TitleImprovement on Chemical Stability of GeO2 Thin Film by Formation of Tetragonal-Phase
Author*Shigehisa Shibayama (Nagoya Univ./Research Fellow of Japan Society for the Promotion Science), Teppei Yoshida, Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
¥Ú¡¼¥¸pp. 185 - 188

P-22 (¥²¡¼¥ÈÀä±ïËì)
Âê̾Ge¾å¥ë¥Á¥ë·¿TiO2 High-kÁؤؤÎY¥É¡¼¥×Ç»Å٤ΰ͸À­¤Ë´Ø¤¹¤ë¸¦µæ
Ãø¼Ô*ÎëÌÚ Îɾ° (ÌÀÂç/NIMS), ĹÅÄ µ®¹°, »³²¼ ÎÉÇ·, Chinnamuthu Paulsamy (NIMS), ¾®¶¶ ϵÁ (ÌÀÂç), À¸ÅÄÌÜ ½Ó½¨ (NIMS), ¾®Ìº ¸ü»Ö (ÌÀÂç), Ãεþ ˭͵ (NIMS)
TitleInfluence of Y Doping for Rutil Type TiO2 on Ge
Author*Yoshihisa Suzuki (Meiji Univ./NIMS), Takahiro Nagata, Yoshiyuki Yamashita, Chinnamuthu Paulsamy (NIMS), Kazuyoshi Kobashi (Meiji Univ.), Toshihide Nabatame (NIMS), Atsushi Ogura (Meiji Univ.), Toyohiro Chikyow (NIMS)
¥Ú¡¼¥¸pp. 189 - 192

P-23 (¥²¡¼¥ÈÀä±ïËì)
Âê̾RE-ALD·ÁÀ®Al2O3/GeO2/p-Ge¤ÎÅŵ¤ÅªÆÃÀ­¤ËµÚ¤Ü¤¹Ç®½èÍý¤È»ÀÁǥ饸¥«¥ë¾È¼Í¤Î¸ú²Ì
Ãø¼Ô*ÎÂÃÓ ¹·À¸, ²£Ê¿ ÃÎÌé, »³ÅÄ ÂçÃÏ, ²¦Ã« ÍÎÊ¿ (¿ÛˬÅìµþÍý²ÊÂç), Ìø ßÛÕÜ, ´Ø ·ÌÂÀ, º´Æ£ ůÌé (»³ÍüÂç), Ê¡ÅÄ ¹¬É× (¿ÛˬÅìµþÍý²ÊÂç)
TitleEffects of Thermal Annealing and Oxygen Radical Irradiation on the Electrical Properties of RE-ALD-Grown Al2O3/GeO2/p-Ge Structure
Author*Kosei Yanachi, Tomoya Yokohira, Daichi Yamada, Yohei Otani (Tokyo Univ. of Science, Suwa), Byeonghak Yoo, Keita Seki, Tetsuya Sato (Univ. of Yamanashi), Yukio Fukuda (Tokyo Univ. of Science, Suwa)
¥Ú¡¼¥¸pp. 193 - 196

P-24 (¹â°ÜÆ°ÅÙ²½µ»½Ñ¡¦¿·¹½Â¤¥²¡¼¥È¥¹¥¿¥Ã¥¯)
Âê̾¹â¶õ´Öʬ²òǽHXPES¤Ë¤è¤ëÏĤߵڤÓÁÈÀ®¤¬SiGe²ÁÅÅ»ÒÂÓ¤ËÍ¿¤¨¤ë±Æ¶Á¤Î¸¡½Ð
Ãø¼Ô*»³ËÙ ½ÓÂÀ, ºû»Ò ÃÎÌï, ݯ°æ ÂóÌé, ÊÆÁÒ ±Í²ð, ß·Ìî ·ûÂÀϺ (ÅìµþÅÔ»ÔÂç), ÃÓ±Ê ±Ñ»Ê (¹âµ±ÅÙ¸÷²Ê³Ø¸¦µæ¥»¥ó¥¿¡¼), ÌîÊ¿ Çî»Ê (ÅìµþÅÔ»ÔÂç)
TitleDetection of Effect of Strain and Composition on the Valence Band of SiGe by HXPES with High Spatial Resolution
Author*Shunta Yamahori, Tomoya Sasago, takuya Sakurai, Eisuke Yonekura, Kentarou Sawano (Tokyo City Univ.), Eiji Ikenaga (Japan Synchrotron Radiation Research Institute), Hiroshi Nohira (Tokyo City Univ.)
¥Ú¡¼¥¸pp. 197 - 200

P-25 (¹â°ÜÆ°ÅÙ²½µ»½Ñ¡¦¿·¹½Â¤¥²¡¼¥È¥¹¥¿¥Ã¥¯)
Âê̾Ge¤ª¤è¤ÓGe1-xSnx¤ÎMOCVDË¡¤Ë¤è¤ë¥¨¥Ô¥¿¥­¥·¥ã¥ëÀ®Ä¹
Ãø¼Ô*¿ÜÅÄ ¹ÌÊ¿, ÌÚÅè δ¹À, Àи¶ À»Ìé, ß·ËÜ Ä¾Èþ (ÌÀÂç), Ä®ÅÄ ±ÑÌÀ, ÀÐÀî ¿¿¿Í, ¿ÜÆ£ ¹° (µ¤ÁêÀ®Ä¹), Âç²¼ ¾Íͺ (Ë­ÅĹ©Âç), ¾®Ìº ¸ü»Ö (ÌÀÂç)
TitleEpitaxial Growth of Ge and Ge1-xSnx by MOCVD
Author*Kohei Suda, Takahiro Kijima, Seiya Ishihara, Naomi Sawamoto (Meiji Univ.), Hideaki Machida, Masato Ishikawa, Hiroshi Sudoh (Gas-phase Growth), Yoshio Ohshita (Toyota Technological Institute), Atsushi Ogura (Meiji Univ.)
¥Ú¡¼¥¸pp. 201 - 204

P-26 (¥²¡¼¥È¥¹¥¿¥Ã¥¯·ÁÀ®µ»½Ñ)
Âê̾¸¶»Ò¾õ¿åÁÇ¥¢¥Ë¡¼¥ë¤Ë¤è¤ëpoly-Ge/SiO2³¦ÌÌÆÃÀ­¤Î²þÁ±
Ãø¼Ô*Éô²È ¾´, Ê¿Ìî æÆÂç, ÁðÊÉ »Ë, ¾¾Èø ľ¿Í (ʼ¸Ë¸©Î©Âç)
TitleImprovement of Interface Property of Poly-Ge/SiO2 by Atomic Hydrogen Annealing
Author*Akira Heya, Shota Hirano, Fumito Kusakabe, Naoto Matsuo (Univ. of Hyogo)
¥Ú¡¼¥¸pp. 205 - 208

P-27 (¥·¥ß¥å¥ì¡¼¥·¥ç¥ó)
Âê̾¶É½êÅŵ¤ÅÁƳΨ¤òÍѤ¤¤¿¥Ê¥ÎºàÎÁ¤ÎʪÀ­²òÀÏ
Ãø¼Ô*ÅÄÀî ·¼ÂÀϺ, Ǹºê ´²Íº, À¥ÇÈ ÂçÅÚ, Ω²Ö ÌÀÃÎ (µþÂç)
TitleAnalysis of Nanomaterials with Local Electrical Conductivity
Author*Keitaro Tagawa, Hiroo Nozaki, Masato Senami, Akitomo Tachibana (Kyoto Univ.)
¥Ú¡¼¥¸pp. 209 - 212

P-28 (¥·¥ß¥å¥ì¡¼¥·¥ç¥ó)
Âê̾»À²½ËìÈïʤ·¿Si¥Ê¥Î¥ï¥¤¥ä¤Ë¤ª¤±¤ëNi¹ç¶â²½¥×¥í¥»¥¹¤Îʬ»ÒÆ°ÎϳØŪ²òÀÏ
Ãø¼Ô*¶¶ËÜ ½¤°ìϺ, ÌÚë ů, ¿Þ»Õ ÃÎʸ, ÅÏîµ ¹§¿® (ÁáÂç)
TitleMolecular Dynamics Simulation of Nickel Silicidation Process in Si/SiO2 Core-shell Nanowires
Author*Shuichiro Hashimoto, Tetsu Kitani, Tomofumi Zushi, Takanobu Watanabe (Waseda Univ.)
¥Ú¡¼¥¸pp. 213 - 216

P-29 (¥·¥ß¥å¥ì¡¼¥·¥ç¥ó)
Âê̾Åž첼¤Ç¤Î¶â°¸¶»Ò¤Î³È»¶¡§¶â°/SiO2³¦Ì̤ˤĤ¤¤Æ¤ÎÂè°ì¸¶ÍýŪÏÀ¸¡Æ¤
Ãø¼Ô*É°»³ Àµ¹¸, Ã滳 δ»Ë (ÀéÍÕÂç)
TitleDiffusion of Metal Atoms in Electric Field: First-Principles Study of Metal/SiO2 Interfaces
Author*Masaaki Hiyama, Takashi Nakayama (Chiba Univ.)
¥Ú¡¼¥¸pp. 217 - 220

P-30 (¥·¥ß¥å¥ì¡¼¥·¥ç¥ó)
Âê̾¶É½ê¥¹¥Ô¥óʪÍýÎ̤ˤè¤ë¥¹¥Ô¥ó¥È¥í¥Ë¥¯¥¹¥Ç¥Ð¥¤¥¹¤ÎʪÀ­²òÀÏÊýË¡
Ãø¼Ô*Ê¡ÅÄ ¾­Âç, À¥ÇÈ ÂçÅÚ, »ÔÀî Ͻ¨, Ω²Ö ÌÀÃÎ (µþÂç)
TitleAn Analysis Method for Physical Properties of Spintronics Devices by Local Spin Physical Quantities
Author*Masahiro Fukuda, Masato Senami, Kazuhide Ichikawa, Akitomo Tachibana (Kyoto Univ.)
¥Ú¡¼¥¸pp. 221 - 224



2015ǯ1·î29Æü(ÌÚ)

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Æü»þ: 2015ǯ1·î29Æü(ÌÚ) 19:00 - 22:00

S-1 (»þ´Ö: 19:00 - 20:30)
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Ãø¼Ô*°ÂÅÄ ¹¬É× (ÅìËÌÂç)
Title(Special Speech)
Author*Yukio Yasuda (Tohoku Univ.)
¥Ú¡¼¥¸pp. 225 - 242

S-2 (»þ´Ö: 20:30 - 22:00)
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Ãø¼Ô*ÉþÉô ·òͺ (ÅìµþÅÔ»ÔÂç)
Title(Special Speech)
Author*Takeo Hattori (Tokyo City Univ.)
¥Ú¡¼¥¸pp. 243 - 267